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1.发明授权Microlithographic exposure method as well as a projection exposure system for carrying out the method 有权微光刻曝光方法以及用于实施该方法的投影曝光系统公开(公告)号：US07847921B2
公开(公告)日：2010-12-07
申请号：US12177715
申请日：2008-07-22
申请人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
发明人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
CPC分类号： G03F7/70566 , G03F7/70108 , G03F7/70225 , G03F7/70308
摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要翻译： 在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。 通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。 可以在基于偏振光学测量数据的控制回路中进行极化处理。
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2.发明申请Microlithographic exposure method as well as a projection exposure system for carrying out the method 有权微光刻曝光方法以及用于实施该方法的投影曝光系统公开(公告)号：US20050146704A1
公开(公告)日：2005-07-07
申请号：US10949396
申请日：2004-09-27
申请人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
发明人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
CPC分类号： G03F7/70566 , G03F7/70108 , G03F7/70225 , G03F7/70308
摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要翻译： 在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。 通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。 可以在基于偏振光学测量数据的控制回路中进行极化处理。
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3.发明授权Microlithographic exposure method as well as a projection exposure system for carrying out the method 有权微光刻曝光方法以及用于实施该方法的投影曝光系统公开(公告)号：US07408616B2
公开(公告)日：2008-08-05
申请号：US10949396
申请日：2004-09-27
申请人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
发明人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
IPC分类号： G03B27/42
CPC分类号： G03F7/70566 , G03F7/70108 , G03F7/70225 , G03F7/70308
摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要翻译： 在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。 通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。 可以在基于偏振光学测量数据的控制回路中进行极化处理。
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4.发明授权Microlithographic exposure method as well as a projection exposure system for carrying out the method 有权微光刻曝光方法以及用于实施该方法的投影曝光系统公开(公告)号：US08767181B2
公开(公告)日：2014-07-01
申请号：US12946380
申请日：2010-11-15
申请人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
发明人： Toralf Gruner , Daniel Kraehmer , Michael Totzeck , Johannes Wangler , Markus Brotsack , Nils Dieckmann , Aksel Goehnermeier , Markus Schwab , Damian Fiolka , Markus Zenzinger
CPC分类号： G03F7/70566 , G03F7/70108 , G03F7/70225 , G03F7/70308
摘要： In an exposure method for exposing a substrate which is arranged in the area of an image plane of a projection objective as well as in a projection exposure system for performing that method, output radiation directed at the substrate and having an output polarization state is produced. Through variable adjustment of the output polarization state with the aid of at least one polarization manipulation device, the output polarization state can be formed to approach a nominal output polarization state. The polarization manipulation can be performed in a control loop on the basis of polarization-optical measuring data.
摘要翻译： 在用于曝光布置在投影物镜的像面的区域中的基板以及用于执行该方法的投影曝光系统中的曝光方法中，产生了指向基板并具有输出偏振态的输出辐射。 通过借助于至少一个偏振操纵装置对输出偏振状态的可变调节，输出偏振状态可以形成为接近标称输出偏振状态。 可以在基于偏振光学测量数据的控制回路中进行极化处理。
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公开(公告)号：US20050094268A1
公开(公告)日：2005-05-05
申请号：US10922380
申请日：2004-08-19
申请人： Damian Fiolka , Olaf Dittmann , Michael Totzeck , Nils Dieckmann , Jess Koehler , Toralf Gruner , Daniel Kraehmer
发明人： Damian Fiolka , Olaf Dittmann , Michael Totzeck , Nils Dieckmann , Jess Koehler , Toralf Gruner , Daniel Kraehmer
IPC分类号： G02B17/08 , G02B27/09 , G02B27/28 , G03F7/20 , G02F1/1335
CPC分类号： G03F7/70241 , G02B27/0994 , G02B27/286 , G03F7/70191 , G03F7/70966
摘要： An optical system (1) includes a first optical subsystem (3) with at least a first birefringent optical element (7), and further includes a second optical subsystem (5) with at least a second birefringent optical element (9). Between the first optical subsystem and the second optical subsystem, an optical retarding system (13) with at least a first optical retarding element (15) is arranged, which introduces a retardation of one-half of a wavelength between two mutually orthogonal states of polarization.
摘要翻译： 光学系统（1）包括具有至少第一双折射光学元件（7）的第一光学子系统（3），并且还包括具有至少第二双折射光学元件（9）的第二光学子系统（5）。 在第一光学子系统和第二光学子系统之间布置有至少具有第一光学延迟元件（15）的光学延迟系统（13），其引入两个相互正交的极化状态之间的波长的一半的延迟 。
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公开(公告)号：US07808615B2
公开(公告)日：2010-10-05
申请号：US11427183
申请日：2006-06-28
申请人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Dittmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
发明人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Dittmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
CPC分类号： G03F7/70958 , G02B13/143 , G02B17/0856 , G02B17/0892 , G02B27/0012 , G03F7/70091
摘要： The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).
摘要翻译： 本发明涉及一种用于操作投影曝光装置以将布置在物平面（6）中的物体（5）的结构的图像投影到布置在图像平面（8）中的基板（10）上的方法。 根据多种可调曝光模式之一，物体（5）被投影曝光装置的工作波长的光照射。 该光在投影曝光装置的至少一个光学元件（9）中产生变化，由此影响投影曝光装置的光学特性。 投影曝光装置的操作允许基于所使用的曝光模式和对象（5）的结构大致计算投影曝光装置的光学特性或取决于前者的光学特性的影响。
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公开(公告)号：US20080002167A1
公开(公告)日：2008-01-03
申请号：US11427183
申请日：2006-06-28
申请人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Hmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
发明人： Toralf Gruner , Olaf Conradi , Nils Dieckmann , Markus Schwab , Olaf Hmann , Michael Totzeck , Daniel Kraehmer , Vladimir Kamenov
CPC分类号： G03F7/70958 , G02B13/143 , G02B17/0856 , G02B17/0892 , G02B27/0012 , G03F7/70091
摘要： The invention concerns a method for operating a projection exposure apparatus to project the image of a structure of an object (5) arranged in an object plane (6) onto a substrate (10) arranged in an image plane (8). The object (5) is illuminated with light of an operating wavelength of the projection exposure apparatus according to one of several adjustable exposure modes. The light produces changes in at least one optical element (9) of the projection exposure apparatus, by which the optical properties of the projection exposure apparatus are influenced. The operation of the projection exposure apparatus makes allowance for the influencing of the optical properties of the projection exposure apparatus or a quantity dependent on the former, being calculated approximately on the basis of the exposure mode used and the structure of the object (5).
摘要翻译： 本发明涉及一种用于操作投影曝光装置以将布置在物平面（6）中的物体（5）的结构的图像投影到布置在图像平面（8）中的基板（10）上的方法。 根据多种可调曝光模式之一，物体（5）被投影曝光装置的工作波长的光照射。 该光在投影曝光装置的至少一个光学元件（9）中产生变化，由此影响投影曝光装置的光学特性。 投影曝光装置的操作允许基于所使用的曝光模式和对象（5）的结构大致计算投影曝光装置的光学特性或取决于前者的光学特性的影响。
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公开(公告)号：US20090190116A1
公开(公告)日：2009-07-30
申请号：US12408577
申请日：2009-03-20
CPC分类号： G03B27/42 , G03F7/70258
摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要翻译： 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。
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公开(公告)号：US08542342B2
公开(公告)日：2013-09-24
申请号：US12408577
申请日：2009-03-20
CPC分类号： G03B27/42 , G03F7/70258
摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system involves illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要翻译： 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。
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公开(公告)号：US20060146304A1
公开(公告)日：2006-07-06
申请号：US11294860
申请日：2005-12-05
IPC分类号： G03B27/42
CPC分类号： G03B27/42 , G03F7/70258
摘要： A lithographic method of manufacturing a miniaturized device using a projection exposure system comprises illuminating the object plane of an imaging optics of the projection exposure system with measuring light; detecting, for each of a plurality of locations on an image plane of the imaging optics, an angular distribution of an intensity of the measuring light traversing the image plane at the respective location; adjusting a telecentricity of the projection exposure system based on a selected patterning structure to be imaged and on the plurality of the detected angular distributions; disposing the selected pattern structure to be imaged in a region of the object plane of the imaging optics; disposing a substrate carrying a resist in a region of the image plane of the imaging optics and exposing the resist with imaging light using the projection exposure system with the adjusted telecentricity; and developing the exposed resist and processing the substrate with the developed resist.
摘要翻译： 使用投影曝光系统制造小型化装置的光刻方法包括用测量光照射投影曝光系统的成像光学元件的物平面; 针对所述摄像光学元件的像平面上的多个位置中的每一个检测在相应位置处穿过所述图像平面的测量光的角度分布; 基于要成像的所选择的图案化结构和所述多个所检测的角度分布来调整所述投影曝光系统的远心度; 将要成像的所选择的图案结构设置在成像光学器件的物平面的区域中; 在所述成像光学元件的像面的区域中设置携带抗蚀剂的基板，并且利用所述投影曝光系统以调节的远心度将成像光曝光; 并显影出曝光的抗蚀剂并用显影的抗蚀剂处理衬底。
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