发明授权
- 专利标题: Nateglinide crystals
- 专利标题(中): 那格列奈晶体
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申请号: US10965171申请日: 2004-10-15
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公开(公告)号: US07411089B2公开(公告)日: 2008-08-12
- 发明人: Yoshihito Koguchi , Tomoko Nakao , Michito Sumikawa
- 申请人: Yoshihito Koguchi , Tomoko Nakao , Michito Sumikawa
- 申请人地址: JP Tokyo
- 专利权人: Ajinomoto Co., Inc.
- 当前专利权人: Ajinomoto Co., Inc.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2002-111963 20020415
- 主分类号: C07C229/00
- IPC分类号: C07C229/00 ; C07C51/15
摘要:
New nateglinide crystals, i.e. nateglinide A-type crystals (main peaks in powder X-ray diffraction: 4.4°, 5.2°, 15.7°, 18.5°(2θ)), M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8°(2θ)) and P-type crystals (main peaks in powder X-ray diffraction: 4.8°, 5.3°, 14.3°, 15.2°(2θ)), can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble or, alternatively, by dissolving nateglinide in a mixed solvent composed of a solvent in which nateglinide is highly soluble and another solvent in which it is difficultly soluble, cooling the nateglinide solution to form crystals, filtering the mixture and drying the crystals at a specified temperature.
公开/授权文献
- US20050101672A1 Nateglinide crystals 公开/授权日:2005-05-12
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