Nateglinide crystals
    1.
    发明申请
    Nateglinide crystals 失效
    那格列奈晶体

    公开(公告)号:US20050101672A1

    公开(公告)日:2005-05-12

    申请号:US10965171

    申请日:2004-10-15

    CPC分类号: C07C233/63 C07C2601/14

    摘要: New nateglinide crystals, i.e. nateglinide A-type crystals (main peaks in powder X-ray diffraction: 4.4°, 5.2°, 15.7°, 18.5°(2θ)), M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8°(2θ)) and P-type crystals (main peaks in powder X-ray diffraction: 4.8°, 5.3°, 14.3°, 15.2°(2θ)), can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble or, alternatively, by dissolving nateglinide in a mixed solvent composed of a solvent in which nateglinide is highly soluble and another solvent in which it is difficultly soluble, cooling the nateglinide solution to form crystals, filtering the mixture and drying the crystals at a specified temperature.

    摘要翻译: 新那格列奈晶体,即那格列奈A型晶体(粉末X射线衍射中的主峰:4.4°,5.2°,15.7°,18.5°(2θ)),M型晶体(粉末X射线衍射中的主峰: 6.0°,14.2°,15.2°,18.8°(2θ))和P型晶体(粉末X射线衍射中的主峰:4.8°,5.3°,14.3°,15.2°(2θ))可以通过 将那格列奈溶解在那格列奈高度溶解的溶剂中,然后加入那格列奈难以溶解的溶剂,或者通过将那格列奈溶解在由那格列奈高度溶解的溶剂和其中所述的其他溶剂组成的混合溶剂中 难以溶解,冷却那格列奈溶液形成晶体,过滤混合物并在特定温度下干燥晶体。

    Nateglinide crystals
    2.
    发明授权
    Nateglinide crystals 失效
    那格列奈晶体

    公开(公告)号:US07977507B2

    公开(公告)日:2011-07-12

    申请号:US12969013

    申请日:2010-12-15

    IPC分类号: C07C229/00 C07C51/15

    CPC分类号: C07C233/63 C07C2601/14

    摘要: Nateglinide M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8° (2θ)) can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble.

    摘要翻译: 那格列奈M型晶体(粉末X射线衍射中的主峰:6.0°,14.2°,15.2°,18.8°(2θ))可以通过将那格列奈溶解在那格列奈高度溶解的溶剂中,然后加入 那格列奈难以溶解的溶剂。

    NATEGLINIDE CRYSTALS
    3.
    发明申请

    公开(公告)号:US20110092733A1

    公开(公告)日:2011-04-21

    申请号:US12969013

    申请日:2010-12-15

    IPC分类号: C07C229/08

    CPC分类号: C07C233/63 C07C2601/14

    摘要: Nateglinide M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8° (2θ)) can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble.

    摘要翻译: 那格列奈M型晶体(粉末X射线衍射中的主峰:6.0°,14.2°,15.2°,18.8°(2θ))可以通过将那格列奈溶解在那格列奈高度溶解的溶剂中,然后加入 那格列奈难以溶解的溶剂。

    Nateglinide crystals
    4.
    发明授权
    Nateglinide crystals 失效
    那格列奈晶体

    公开(公告)号:US07411089B2

    公开(公告)日:2008-08-12

    申请号:US10965171

    申请日:2004-10-15

    IPC分类号: C07C229/00 C07C51/15

    CPC分类号: C07C233/63 C07C2601/14

    摘要: New nateglinide crystals, i.e. nateglinide A-type crystals (main peaks in powder X-ray diffraction: 4.4°, 5.2°, 15.7°, 18.5°(2θ)), M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8°(2θ)) and P-type crystals (main peaks in powder X-ray diffraction: 4.8°, 5.3°, 14.3°, 15.2°(2θ)), can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble or, alternatively, by dissolving nateglinide in a mixed solvent composed of a solvent in which nateglinide is highly soluble and another solvent in which it is difficultly soluble, cooling the nateglinide solution to form crystals, filtering the mixture and drying the crystals at a specified temperature.

    摘要翻译: 新那格列奈晶体,即那格列奈A型晶体(粉末X射线衍射中的主峰:4.4°,5.2°,15.7°,18.5°(2θ)),M型晶体(粉末X射线衍射中的主峰: 6.0°,14.2°,15.2°,18.8°(2θ))和P型晶体(粉末X射线衍射中的主峰:4.8°,5.3°,14.3°,15.2°(2θ))可以通过 将那格列奈溶解在那格列奈高度溶解的溶剂中,然后加入那格列奈难以溶解的溶剂,或者通过将那格列奈溶解在由那格列奈高度溶解的溶剂和其中所述的其他溶剂组成的混合溶剂中 难以溶解,冷却那格列奈溶液形成晶体,过滤混合物并在特定温度下干燥晶体。

    NATEGLINIDE CRYSTALS
    5.
    发明申请

    公开(公告)号:US20090253933A1

    公开(公告)日:2009-10-08

    申请号:US12485156

    申请日:2009-06-16

    IPC分类号: C07C229/36

    CPC分类号: C07C233/63 C07C2601/14

    摘要: Nateglinide M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8° (2θ)) can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble.

    摘要翻译: 那格列奈M型晶体(粉末X射线衍射中的主峰:6.0°,14.2°,15.2°,18.8°(2θ))可以通过将那格列奈溶解在那格列奈高度溶解的溶剂中,然后加入溶剂 那格列奈难以溶解。

    NATEGLINIDE CRYSTALS
    6.
    发明申请

    公开(公告)号:US20080194867A1

    公开(公告)日:2008-08-14

    申请号:US12098118

    申请日:2008-04-04

    IPC分类号: C07C229/28

    CPC分类号: C07C233/63 C07C2601/14

    摘要: New nateglinide crystals, i.e. nateglinide A-type crystals (main peaks in powder X-ray diffraction: 4.4°, 5.2°, 15.7°, 18.5° (2θ)), M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8° (2θ)) and P-type crystals (main peaks in powder X-ray diffraction: 4.8°, 5.3°, 14.3°, 15.2° (2θ)), can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble or, alternatively, by dissolving nateglinide in a mixed solvent composed of a solvent in which nateglinide is highly soluble and another solvent in which it is difficultly soluble, cooling the nateglinide solution to form crystals, filtering the mixture and drying the crystals at a specified temperature.

    摘要翻译: 新那格列奈晶体,即那格列奈A型晶体(粉末X射线衍射中的主峰:4.4°,5.2°,15.7°,18.5°(2θ)),M型结晶(粉末X射线衍射中的主峰: 6.0°,14.2°,15.2°,18.8°(2θ))和P型晶体(粉末X射线衍射中的主峰:4.8°,5.3°,14.3°,15.2°(2θ))可以通过 将那格列奈溶解在那格列奈高度溶解的溶剂中,然后加入那格列奈难以溶解的溶剂,或者通过将那格列奈溶解在由那格列奈高度溶解的溶剂和其中所述的其他溶剂组成的混合溶剂中 难以溶解,冷却那格列奈溶液形成晶体,过滤混合物并在特定温度下干燥晶体。

    Nateglinide crystals
    8.
    发明授权
    Nateglinide crystals 失效
    那格列奈晶体

    公开(公告)号:US07586001B2

    公开(公告)日:2009-09-08

    申请号:US12098118

    申请日:2008-04-04

    IPC分类号: C07C229/00 C07C51/15

    CPC分类号: C07C233/63 C07C2601/14

    摘要: New nateglinide crystals, i. e. nateglinide A-type crystals (main peaks in powder X-ray diffraction: 4.4°, 5.2°, 15.7°, 18.5° (2θ)), M-type crystals (main peaks in powder X-ray diffraction: 6.0°, 14.2°, 15.2°, 18.8° (2θ)) and P-type crystals (main peaks in powder X-ray diffraction: 4.8°, 5.3°, 14.3°, 15.2° (2θ)), can be produced by dissolving nateglinide in a solvent in which nateglinide is highly soluble and then adding a solvent in which nateglinide is difficultly soluble or, alternatively, by dissolving nateglinide in a mixed solvent composed of a solvent in which nateglinide is highly soluble and another solvent in which it is difficultly soluble, cooling the nateglinide solution to form crystals, filtering the mixture and drying the crystals at a specified temperature.

    摘要翻译: 新奈格列奈晶体, e。 那格列奈A型晶体(粉末X射线衍射中的主峰:4.4°,5.2°,15.7°,18.5°(2θ)),M型晶体(粉末X射线衍射中的主峰:6.0°,14.2° ,15.2°,18.8°(2θ))和P型晶体(粉末X射线衍射中的主峰:4.8°,5.3°,14.3°,15.2°(2θ))可以通过将那格列奈溶解在溶剂中 其中那格列奈高度可溶,然后加入那格列奈难以溶解的溶剂,或者通过将那格列奈溶解在由那格列奈高度溶解的溶剂和难溶于其中的溶剂组成的混合溶剂中,冷却 那格列奈溶液形成晶体,过滤混合物并在特定温度下干燥晶体。