发明授权
US07411207B2 Method and its apparatus for inspecting particles or defects of a semiconductor device
有权
用于检查半导体器件的颗粒或缺陷的方法及其装置
- 专利标题： Method and its apparatus for inspecting particles or defects of a semiconductor device
- 专利标题（中）： 用于检查半导体器件的颗粒或缺陷的方法及其装置
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申请号： US11782760申请日： 2007-07-25
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公开(公告)号： US07411207B2公开(公告)日： 2008-08-12
- 发明人: Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ohshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
- 申请人： Hidetoshi Nishiyama , Minori Noguchi , Yoshimasa Ohshima , Akira Hamamatsu , Kenji Watanabe , Tetsuya Watanabe , Takahiro Jingu
- 申请人地址： JP Tokyo JP Tokyo
- 专利权人： Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人： Hitachi, Ltd.,Hitachi High-Technologies Corporation
- 当前专利权人地址： JP Tokyo JP Tokyo
- 代理机构： Antonelli, Terry, Stout & Kraus, LLP.
- 优先权： JP2000-291952 20000921; JP2001-288013 20010921
- 主分类号： G01N21/88
- IPC分类号： G01N21/88
摘要：
An apparatus for inspecting particles and/or pattern defects of an object under inspection. Data processing means obtains information on size of the particles and/or the pattern defects from an intensity of the scattered light detected by the light detecting means by referring to a relationship between an intensity of scattered light from a standard particle and a size of the standard particle, and using a calibration coefficient for compensating for a change in intensity of the light of the illuminating means from a predetermined intensity.
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