发明授权
- 专利标题： Phase-change memory device having a barrier layer and manufacturing method
- 专利标题（中）： 具有阻挡层的相变存储器件和制造方法
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申请号： US11027255申请日： 2004-12-30
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公开(公告)号： US07411208B2公开(公告)日： 2008-08-12
- 发明人: Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
- 申请人： Young-Nam Hwang , Gwan-Hyeob Koh , Su-Jin Ahn , Sung-Lae Cho , Se-Ho Lee , Kyung-Chang Ryoo , Chang-Wook Jeong , Su-Youn Lee , Bong-Jin Kuh
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Marger Johnson & McCollom, P.C.
- 优先权： KR10-2004-0037965 20040527
- 主分类号： H01L45/00
- IPC分类号： H01L45/00
摘要：
A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.