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52 条记录 (耗时 0.019 秒)

    LINEAR VIBRATOR
    1.
    发明申请
    LINEAR VIBRATOR 有权
    线性振动器

    公开(公告)号：US20130088100A1

    公开(公告)日：2013-04-11

    申请号：US13352911

    申请日：2012-01-18

    申请人： Kyung Ho LEE ,  Young Nam Hwang ,  Po Chul Kim ,  Yong Jin Kim

    发明人： Kyung Ho LEE ,  Young Nam Hwang ,  Po Chul Kim ,  Yong Jin Kim

    IPC分类号： H02K33/00

    CPC分类号： H02K33/18

    摘要： There is provided a linear vibrator, including: a fixed part providing an interior space having a predetermined size; at least one magnet disposed in the interior space and generating magnetic force; a vibration part including a coil facing the magnet and generating electromagnetic force through interaction with the magnet and a mass body; and an elastic member coupled to the fixed part and the vibration part to mediate vibrations of the vibration part and having a damping increasing portion attached to a predetermined region of a surface thereof.

    摘要翻译： 提供了一种线性振动器，包括：提供具有预定尺寸的内部空间的固定部分; 设置在内部空间中并产生磁力的至少一个磁体; 振动部，其包括面对所述磁体的线圈，并且通过与所述磁体和质量体的相互作用产生电磁力; 以及弹性构件，其联接到所述固定部分和所述振动部分，以调解所述振动部分的振动并且具有附接到其表面的预定区域的阻尼增加部分。

    Multi-bit phase change memory devices
    2.
    发明授权
    Multi-bit phase change memory devices 有权
    多位相变存储器件

    公开(公告)号：US08320170B2

    公开(公告)日：2012-11-27

    申请号：US12656716

    申请日：2010-02-16

    申请人： Young-nam Hwang ,  Soon-oh Park ,  Hong-sik Jeong ,  Gi-tae Jeong

    发明人： Young-nam Hwang ,  Soon-oh Park ,  Hong-sik Jeong ,  Gi-tae Jeong

    IPC分类号： G11C11/00

    CPC分类号： H01L45/065 ,  G11C11/5678 ,  G11C13/0004 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144

    摘要： A multi-bit phase change memory device including a phase change material having a plurality of crystalline phases. A non-volatile multi-bit phase change memory device may include a phase change material in a storage node, wherein the phase change material includes a binary or ternary compound sequentially having at least three crystalline phases having different resistance values according to an increase of temperature of the phase change material.

    摘要翻译： 一种多位相变存储器件，包括具有多个结晶相的相变材料。 非易失性多位相变存储器件可以包括存储节点中的相变材料，其中相变材料包括依次具有至少三个根据温度升高的不同电阻值的晶相的二元或三元化合物 的相变材料。

    Non-volatile memory device and storage system including the same
    4.
    发明申请
    Non-volatile memory device and storage system including the same 审中-公开
    非易失性存储器件和包括其的存储系统

    公开(公告)号：US20100061141A1

    公开(公告)日：2010-03-11

    申请号：US12461990

    申请日：2009-08-31

    申请人： Young Nam Hwang

    发明人： Young Nam Hwang

    IPC分类号： G11C11/00 ,  G11C7/02 ,  G11C7/10

    CPC分类号： G11C7/04 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/004 ,  G11C2013/0054 ,  G11C2211/5634

    摘要： A non-volatile memory device may include a plurality of data cells, each data cell of the plurality of data cells programmed to have a first resistance variation among a plurality of first resistance variations; and a plurality of reference cells, each reference cell of the plurality of reference cells programmed to have a second resistance variation among a plurality of second resistance variations. A change in a resistance of the data cells is used to identify a level of data programmed to memory. Because the resistance variation of the data cells may change with time or due to changes in temperature, a reference cell is also included in the non-volatile memory device. The reference cell is used for effective reading of the data value of a corresponding data cell. A storage system may include the non-volatile memory device.

    摘要翻译： 非易失性存储器件可以包括多个数据单元，多个数据单元中的每个数据单元被编程为在多个第一电阻变化中具有第一电阻变化; 以及多个参考单元，所述多个参考单元中的每个参考单元被编程为在多个第二电阻变化中具有第二电阻变化。 使用数据单元的电阻的变化来识别被编程到存储器的数据的级别。 因为数据单元的电阻变化可随时间改变或者由于温度的变化而变化，因此参考单元也包括在非易失性存储器件中。 参考单元用于有效读取相应数据单元的数据值。 存储系统可以包括非易失性存储器设备。

    LAMINATED CERAMIC SUBSTRATE
    5.
    发明申请
    LAMINATED CERAMIC SUBSTRATE 审中-公开
    层压陶瓷基板

    公开(公告)号：US20100003479A1

    公开(公告)日：2010-01-07

    申请号：US12370241

    申请日：2009-02-12

    申请人： Young Nam Hwang ,  Young Bok Yoon

    发明人： Young Nam Hwang ,  Young Bok Yoon

    IPC分类号： B32B7/00

    CPC分类号： H05K1/0306 ,  B32B18/00 ,  C04B2235/36 ,  C04B2237/343 ,  C04B2237/346 ,  C04B2237/58 ,  C04B2237/704 ,  H05K1/0271 ,  H05K2201/0191 ,  H05K2201/0195 ,  Y10T428/2495

    摘要： Provided is a laminated ceramic substrate. The laminated ceramic substrate includes a first ceramic layer, a second ceramic layer, and a third ceramic layer. The first ceramic layer is formed of a material with a first thermal expansion coefficient. The second ceramic layer is laminated on one side of the first ceramic layer. The second ceramic layer is formed of a material with a second thermal expansion coefficient different from the first thermal expansion coefficient. The third ceramic layer is laminated on the other side of the first ceramic layer. The third ceramic layer is formed of a material with the second thermal expansion coefficient. The third ceramic layer has a different thickness than the second ceramic layer.

    摘要翻译： 提供层叠陶瓷基板。 层叠陶瓷基板包括第一陶瓷层，第二陶瓷层和第三陶瓷层。 第一陶瓷层由具有第一热膨胀系数的材料形成。 第二陶瓷层层叠在第一陶瓷层的一侧。 第二陶瓷层由不同于第一热膨胀系数的第二热膨胀系数的材料形成。 第三陶瓷层层叠在第一陶瓷层的另一侧。 第三陶瓷层由具有第二热膨胀系数的材料形成。 第三陶瓷层的厚度与第二陶瓷层的厚度不同。

    Light emitting transistor
    8.
    发明申请
    Light emitting transistor 审中-公开
    发光晶体管

    公开(公告)号：US20070284616A1

    公开(公告)日：2007-12-13

    申请号：US11808158

    申请日：2007-06-07

    申请人： Won Ha Moon ,  Chang Hwan Choi ,  Young Nam Hwang

    发明人： Won Ha Moon ,  Chang Hwan Choi ,  Young Nam Hwang

    IPC分类号： H01L31/00

    CPC分类号： H01L33/0004

    摘要： A light emitting transistor comprises a first conductivity-type collector layer formed on a substrate; a second conductivity-type base layer formed on a predetermine region of the collector layer; a collector electrode formed on the collector layer where the base layer is not formed; a first conductivity-type emitter layer formed on a predetermine region of the base layer; a base electrode formed on the base layer where the emitter layer is not formed; an emitter electrode formed on the emitter layer; a first activation layer formed between the collector layer and the base layer; and a second activation layer formed between the base layer and the emitter layer.

    摘要翻译： 发光晶体管包括形成在基板上的第一导电型集电极层; 形成在所述集电体层的预定区域上的第二导电型基底层; 形成在未形成基底层的集电体层上的集电极; 形成在所述基底层的预定区域上的第一导电型发射极层; 形成在未形成发射极层的基底层上的基极; 形成在发射极层上的发射电极; 在所述集电体层和所述基极层之间形成的第一活化层; 以及形成在所述基底层和所述发射极层之间的第二激活层。

    Phase change memory devices including memory elements having variable cross-sectional areas
    10.
    发明申请
    Phase change memory devices including memory elements having variable cross-sectional areas 失效
    相变存储器件包括具有可变横截面积的存储元件

    公开(公告)号：US20050167645A1

    公开(公告)日：2005-08-04

    申请号：US11017594

    申请日：2004-12-20

    申请人： Young-tae Kim ,  Young-nam Hwang ,  Tai-kyung Kim ,  Won-young Chung ,  Keun-ho Lee

    发明人： Young-tae Kim ,  Young-nam Hwang ,  Tai-kyung Kim ,  Won-young Chung ,  Keun-ho Lee

    IPC分类号： H01L27/108 ,  H01L29/02 ,  H01L45/00

    CPC分类号： H01L45/06 ,  H01L45/122 ,  H01L45/1233 ,  H01L45/144

    摘要： A phase-change memory device may include first and second spaced apart conductive electrodes, and a phase-change memory element coupled between the first and second conductive electrodes. More particularly, a first portion of the phase-change memory element may have a first cross-sectional area along a current path between the first and second conductive electrodes, and a second portion of the phase-change memory element may have a second cross-sectional area along the current path between the first and second conductive electrodes. Moreover, the first and second cross-sectional areas may be different.

    摘要翻译： 相变存储器件可以包括第一和第二间隔开的导电电极，以及耦合在第一和第二导电电极之间的相变存储元件。 更具体地，相变存储元件的第一部分可以具有沿着第一和第二导电电极之间的电流路径的第一横截面积，并且相变存储元件的第二部分可以具有第二横截面积， 沿着第一和第二导电电极之间的电流路径的截面积。 此外，第一和第二横截面积可以不同。