发明授权
- 专利标题： CMOS silicide metal gate integration
- 专利标题（中）： CMOS硅化物金属栅极集成
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申请号： US11407313申请日： 2006-04-19
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公开(公告)号： US07411227B2公开(公告)日： 2008-08-12
- 发明人: Ricky S. Amos , Diane C. Boyd , Cyril Cabral, Jr. , Richard D. Kaplan , Jakub T. Kedzierski , Victor Ku , Woo-Hyeong Lee , Ying Li , Anda C. Mocuta , Vijay Narayanan , An L. Steegen , Maheswaren Surendra
- 申请人： Ricky S. Amos , Diane C. Boyd , Cyril Cabral, Jr. , Richard D. Kaplan , Jakub T. Kedzierski , Victor Ku , Woo-Hyeong Lee , Ying Li , Anda C. Mocuta , Vijay Narayanan , An L. Steegen , Maheswaren Surendra
- 申请人地址： US NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： US NY Armonk
- 代理机构： Scully, Scott, Murphy & Presser P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号： H01L27/10
- IPC分类号： H01L27/10 ; H01L29/73
摘要：
The present invention provides a complementary metal oxide semiconductor integration process whereby a plurality of silicided metal gates are fabricated atop a gate dielectric. Each silicided metal gate that is formed using the integration scheme of the present invention has the same silicide metal phase and substantially the same height, regardless of the dimension of the silicide metal gate. The present invention also provides various methods of forming a CMOS structure having silicided contacts in which the polySi gate heights are substantially the same across the entire surface of a semiconductor structure.
公开/授权文献
- US20060189061A1 CMOS silicide metal gate integration 公开/授权日：2006-08-24
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