Invention Grant
US07411230B2 Solid-state imaging device and method of manufacturing said solid-state imaging device
失效
固态成像装置以及制造所述固态成像装置的方法
- Patent Title: Solid-state imaging device and method of manufacturing said solid-state imaging device
- Patent Title (中): 固态成像装置以及制造所述固态成像装置的方法
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Application No.: US11404898Application Date: 2006-04-17
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Publication No.: US07411230B2Publication Date: 2008-08-12
- Inventor: Hiroshi Maeda , Kazuhiro Nishida , Yoshihisa Negishi , Shunichi Hosaka
- Applicant: Hiroshi Maeda , Kazuhiro Nishida , Yoshihisa Negishi , Shunichi Hosaka
- Applicant Address: JP Tokyo
- Assignee: Fujifilm Corporation
- Current Assignee: Fujifilm Corporation
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JPP.2002-119262 20020422; JPP.2002-154528 20020528; JPP.2002-183072 20020624; JPP.2002-219645 20020729; JPP.2002-219791 20020729
- Main IPC: H01L27/148
- IPC: H01L27/148
Abstract:
It is an object to provide solid-state imaging device, which can easily be manufactured and has a high reliability, and a method of manufacturing the solid-state imaging device. In the present invention, a manufacturing method comprises the steps of forming a plurality of IT-CCDs on a surface of a semiconductor substrate, bonding a translucent member to the surface of the semiconductor substrate in order to have a gap opposite to each light receiving region of the IT-CCD, and isolating a bonded member obtained at the bonding step for each of the IT-CCDs.
Public/Granted literature
- US20060186499A1 Solid-state imaging device and method of manufacturing said solid-state imaging device Public/Granted day:2006-08-24
Information query
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