发明授权
- 专利标题: Gas reaction system and semiconductor processing apparatus
- 专利标题(中): 气体反应系统和半导体加工装置
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申请号: US10565676申请日: 2004-07-23
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公开(公告)号: US07413611B2公开(公告)日: 2008-08-19
- 发明人: Hachishiro Iizuka
- 申请人: Hachishiro Iizuka
- 申请人地址: JP Tokyo
- 专利权人: Tokyo Electron Limited
- 当前专利权人: Tokyo Electron Limited
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-279970 20030725
- 国际申请: PCT/JP2004/010895 WO 20040723
- 国际公布: WO2005/010969 WO 20050203
- 主分类号: C23C16/00
- IPC分类号: C23C16/00
摘要:
A gas reaction system is disclosed which comprises a vaporizer (230) for generating a reaction gas by vaporizing a liquid material and a reaction chamber (221A) wherein the reaction gas is reacted. The vaporizer (230) is integrally formed with a component member which defines the reaction chamber (221A). The reaction gas generated in the vaporizer (230) is directly introduced into the reaction chamber (221A). The vaporization chamber (232) of the vaporizer (230) is a space between an upper plate (230A) and a cap (230B) attached to the upper surface of the upper plate (230A). A narrow passage (233) is formed between the cap (230B) and the upper plate (230A) which passage (233) communicates with the vaporization chamber (232).
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