发明授权
US07414281B1 Flash memory with high-K dielectric material between substrate and gate
有权
闪存与衬底和栅极之间的高K电介质材料
- 专利标题： Flash memory with high-K dielectric material between substrate and gate
- 专利标题（中）： 闪存与衬底和栅极之间的高K电介质材料
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申请号： US10658936申请日： 2003-09-09
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公开(公告)号： US07414281B1公开(公告)日： 2008-08-19
- 发明人: Richard M. Fastow , Yue-Song He , Zhigang Wang
- 申请人： Richard M. Fastow , Yue-Song He , Zhigang Wang
- 申请人地址： US CA Sunnyvale
- 专利权人： Spansion LLC
- 当前专利权人： Spansion LLC
- 当前专利权人地址： US CA Sunnyvale
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
A flash memory cell and a method of forming the same are described. The flash memory cell may include a substrate having a source and a drain, a gate element, and a dielectric layer between the substrate and the gate element. The dielectric layer includes a dielectric material having a dielectric constant that is greater than that of silicon dioxide.
公开/授权文献
- US2130545A Agitating apparatus 公开/授权日：1938-09-20
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