发明授权
US07423327B2 Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors
有权
基于自旋滤波器效应的旋转晶体管和使用自旋晶体管的非易失性存储器
- 专利标题： Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors
- 专利标题（中）： 基于自旋滤波器效应的旋转晶体管和使用自旋晶体管的非易失性存储器
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申请号： US10522241申请日： 2003-07-25
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公开(公告)号： US07423327B2公开(公告)日： 2008-09-09
- 发明人: Satoshi Sugahara , Masaaki Tanaka
- 申请人： Satoshi Sugahara , Masaaki Tanaka
- 申请人地址： JP Saitama
- 专利权人： Japan Science and Technology Agency
- 当前专利权人： Japan Science and Technology Agency
- 当前专利权人地址： JP Saitama
- 代理机构： Reed Smith LLP
- 代理商 Stanley P. Fisher, Esq.; Juan Carlos A. Marquez, Esq.
- 优先权： JP2002-217336 20020725; JP2003-086145 20030326
- 国际申请： PCT/JP03/09438 WO 20030725
- 国际公布： WO2004/012272 WO 20040205
- 主分类号： H01L29/02
- IPC分类号： H01L29/02
摘要：
A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.
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