公开(公告)号：US07671433B2

公开(公告)日：2010-03-02

申请号：US11979221

申请日：2007-10-31

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

公开(公告)号：US07423327B2

公开(公告)日：2008-09-09

申请号：US10522241

申请日：2003-07-25

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/02

CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

公开(公告)号：US20080067501A1

公开(公告)日：2008-03-20

申请号：US11979220

申请日：2007-10-31

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

公开(公告)号：US20080061336A1

公开(公告)日：2008-03-13

申请号：US11979221

申请日：2007-10-31

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/78

CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

公开(公告)号：US20060043443A1

公开(公告)日：2006-03-02

申请号：US10522241

申请日：2003-07-25

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/94

CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

公开(公告)号：US08026563B2

公开(公告)日：2011-09-27

申请号：US12923450

申请日：2010-09-22

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

公开(公告)号：US20110031545A1

公开(公告)日：2011-02-10

申请号：US12923450

申请日：2010-09-22

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/82

CPC分类号： H01L29/66984 ,  G11C11/15 ,  G11C11/16 ,  H01L29/73 ,  H01L29/778 ,  H01L29/78 ,  H01L43/08

摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

摘要翻译： 自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。 它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极 非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。 还提供了包括这种自旋晶体管的存储元件。

公开(公告)号：US07714400B2

公开(公告)日：2010-05-11

申请号：US11979346

申请日：2007-11-01

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/70

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F1/405 ,  H01F10/193 ,  H01L27/228 ,  H01L29/66984

摘要： A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.

摘要翻译： 其沟道区域是铁磁半导体的MISFET具有能够通过栅极电压来控制漏极电流的特征，并且可以通过铁磁通道区域中的相对磁化方向和 铁磁源（或铁磁性漏极，或铁磁源和铁磁性漏极）。 结果，可以以相对磁化方向的形式存储二进制信息，并且电检测相对磁化方向。 如果磁性由铁磁半导体的沟道区域的电场效应控制，则可以大大减少重写信息所需的电流。 因此，MISFET可以构成适合于高密度集成的高性能非易失性存储单元。

公开(公告)号：US20060118839A1

公开(公告)日：2006-06-08

申请号：US10551802

申请日：2004-03-30

申请人： Satoshi Sugahara ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Masaaki Tanaka

IPC分类号： H01L29/94

CPC分类号： H01F10/3254 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F1/405 ,  H01F10/193 ,  H01L27/228 ,  H01L29/66984

摘要： A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.

摘要翻译： 其沟道区域是铁磁半导体的MISFET具有能够通过栅极电压来控制漏极电流的特征，并且可以通过铁磁通道区域中的相对磁化方向和 铁磁源（或铁磁性漏极，或铁磁源和铁磁性漏极）。 结果，可以以相对磁化方向的形式存储二进制信息，并且电检测相对磁化方向。 如果磁性由铁磁半导体的沟道区域的电场效应控制，则可以大大减少重写信息所需的电流。 因此，MISFET可以构成适合于高密度集成的高性能非易失性存储单元。

公开(公告)号：US07545013B2

公开(公告)日：2009-06-09

申请号：US10550652

申请日：2004-03-26

申请人： Satoshi Sugahara ,  Tomohiro Matsuno ,  Masaaki Tanaka

发明人： Satoshi Sugahara ,  Tomohiro Matsuno ,  Masaaki Tanaka

IPC分类号： H01L29/739

CPC分类号： H03K19/0944 ,  H01L29/66984

摘要： A nonvolatilely reconfigurable logical circuit is built. It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of each transistor in accordance with the magnetization states of Tr1, Tr2, Tr5, and Tr8 which are spin MOSFETs, it is possible to reconfigure all the two-input symmetric functions AND/OR/XOR/NAND/NOR/XNOR/“1”/“0”. Since it is possible to constitute the logical function by a small number of non-volatile elements, it is possible to reduce the chip area, thereby increasing the speed and reducing the power consumption.

摘要翻译： 构建了非易失性可重构逻辑电路。 它是基于使用自旋MOSFET的CMOS配置的可重构逻辑电路。 通过根据作为自旋MOSFET的Tr1，Tr2，Tr5和Tr8的磁化状态改变每个晶体管的传输特性，可以重新配置所有双输入对称函数AND / OR / XOR / NAND / NOR / XNOR /“1”/“0”。 由于可以通过少量非易失性元件构成逻辑功能，因此可以减少芯片面积，从而提高速度并降低功耗。