发明授权
- 专利标题: Introduction of metal impurity to change workfunction of conductive electrodes
- 专利标题(中): 引入金属杂质来改变导电电极的功能
-
申请号: US11336727申请日: 2006-01-20
-
公开(公告)号: US07425497B2公开(公告)日: 2008-09-16
- 发明人: Michael P. Chudzik , Bruce B. Doris , Supratik Guha , Rajarao Jammy , Vijay Narayanan , Vamsi K. Paruchuri , Yun Y. Wang , Keith Kwong Hon Wong
- 申请人: Michael P. Chudzik , Bruce B. Doris , Supratik Guha , Rajarao Jammy , Vijay Narayanan , Vamsi K. Paruchuri , Yun Y. Wang , Keith Kwong Hon Wong
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 代理机构: Scully, Scott, Murphy & Presser, P.C.
- 代理商 Robert M. Trepp, Esq.
- 主分类号: H01L21/283
- IPC分类号: H01L21/283
摘要:
Semiconductor structures, such as, for example, field effect transistors (FETs) and/or metal-oxide-semiconductor capacitor (MOSCAPs), are provided in which the workfunction of a conductive electrode stack is changed by introducing metal impurities into a metal-containing material layer which, together with a conductive electrode, is present in the electrode stack. The choice of metal impurities depends on whether the electrode is to have an n-type workfunction or a p-type workfunction. The present invention also provides a method of fabricating such semiconductor structures. The introduction of metal impurities can be achieved by codeposition of a layer containing both a metal-containing material and workfunction altering metal impurities, forming a stack in which a layer of metal impurities is present between layers of a metal-containing material, or by forming a material layer including the metal impurities above and/or below a metal-containing material and then heating the structure so that the metal impurities are introduced into the metal-containing material.