- 专利标题: Semiconductor memory device and method of manufacturing the same
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申请号: US11941776申请日: 2007-11-16
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公开(公告)号: US07429508B2公开(公告)日: 2008-09-30
- 发明人: Osamu Hidaka , Iwao Kunishima , Hiroyuki Kanaya
- 申请人: Osamu Hidaka , Iwao Kunishima , Hiroyuki Kanaya
- 申请人地址: JP Tokyo
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, Spivak, McClelland, Maier & Neustadt, P.C.
- 优先权: JP2003-398162 20031127
- 主分类号: H01L21/8242
- IPC分类号: H01L21/8242
摘要:
A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.