发明授权
- 专利标题： Bit line implant
- 专利标题（中）： 位线植入
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申请号： US11254769申请日： 2005-10-21
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公开(公告)号： US07432178B2公开(公告)日： 2008-10-07
- 发明人: Angela T. Hui , Jean Yang , Yu Sun , Mark T. Ramsbey , Weidong Qian
- 申请人： Angela T. Hui , Jean Yang , Yu Sun , Mark T. Ramsbey , Weidong Qian
- 申请人地址： US CA Sunnyvale US CA Sunnyvale
- 专利权人： Advanced Micro Devices, Inc.,Spansion LLC
- 当前专利权人： Advanced Micro Devices, Inc.,Spansion LLC
- 当前专利权人地址： US CA Sunnyvale US CA Sunnyvale
- 代理机构： Harrity Snyder, LLP
- 主分类号： H01L21/04
- IPC分类号： H01L21/04
摘要：
A method for performing a bit line implant is disclosed. The method includes forming a group of structures on an oxide-nitride-oxide stack of a semiconductor device. Each structure of the group of structures includes a polysilicon portion and a hard mask portion. A first structure of the group of structures is separated from a second structure of the group of structures by less than 100 nanometers. The method further includes using the first structure and the second structure to isolate a portion of the semiconductor device for the bit line implant.
公开/授权文献
- US20070093042A1 Bit line implant 公开/授权日：2007-04-26
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