发明授权
- 专利标题： Semiconductor device and manufacturing method thereof
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11503935申请日： 2006-08-15
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公开(公告)号： US07432216B2公开(公告)日： 2008-10-07
- 发明人: Yasuhiro Shimamoto , Shinichi Saito , Shimpei Tsujikawa
- 申请人： Yasuhiro Shimamoto , Shinichi Saito , Shimpei Tsujikawa
- 申请人地址： JP Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JP Tokyo
- 代理机构： Mattingly, Stanger, Malur & Brundidge, P.C.
- 优先权： JPP2003-079375 20030324
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/8238 ; H01L21/336 ; H01L29/06
摘要：
The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N2O atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm−2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm−2 or more.
公开/授权文献
- US20060273357A1 Semiconductor device and manufacturing method thereof 公开/授权日：2006-12-07