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    Semiconductor device and manufacturing method thereof
    1.
    发明授权
    Semiconductor device and manufacturing method thereof 失效

    公开(公告)号：US07112833B2

    公开(公告)日：2006-09-26

    申请号：US10788278

    申请日：2004-03-01

    申请人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    发明人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    IPC分类号： H01L29/76 ,  H01L21/336

    CPC分类号： H01L21/28202 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

    摘要： The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N2O atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm−2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm−2 or more.

    Semiconductor device and manufacturing method thereof
    2.
    发明申请
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US20060273357A1

    公开(公告)日：2006-12-07

    申请号：US11503935

    申请日：2006-08-15

    申请人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    发明人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    IPC分类号： H01L29/76

    CPC分类号： H01L21/28202 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

    摘要： The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N2O atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm−2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm−2 or more.

    摘要翻译： 提供了能够通过抑制由于固定电荷引起的载流子散射来降低MISFET中的功耗的技术。 在半导体基板和氧化铝膜之间的界面处形成物理厚度为1.5nm以上，相对介电常数为4.1以上的氮氧化硅膜。 由此构成由氧氮化硅膜和氧化铝膜构成的栅极绝缘体。 氮氧化硅膜是通过在NO或N 2 O气氛中进行在半导体衬底上形成的氧化硅膜的热处理而形成的。 以这种方式，将氧氮化硅膜中的固定电荷设定为5×10 12 -2 -2或更小，并且在氮氧化硅膜和 氧化铝膜设定为5×10 12 cm -2以上。

    Semiconductor device and manufacturing method thereof
    3.
    发明授权
    Semiconductor device and manufacturing method thereof 失效
    半导体装置及其制造方法

    公开(公告)号：US07432216B2

    公开(公告)日：2008-10-07

    申请号：US11503935

    申请日：2006-08-15

    申请人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    发明人： Yasuhiro Shimamoto ,  Shinichi Saito ,  Shimpei Tsujikawa

    IPC分类号： H01L21/31 ,  H01L21/8238 ,  H01L21/336 ,  H01L29/06

    CPC分类号： H01L21/28202 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659

    摘要： The technique capable of reducing the power consumption in the MISFET by suppressing the scattering of the carriers due to the fixed charges is provided. A silicon oxynitride film with a physical thickness of 1.5 nm or more and the relative dielectric constant of 4.1 or higher is formed at the interface between a semiconductor substrate and an alumina film. By so doing, a gate insulator composed of the silicon oxynitride film and the alumina film is constituted. The silicon oxynitride film is formed by performing a thermal treatment of a silicon oxide film formed on the semiconductor substrate in a NO or N2O atmosphere. In this manner, the fixed charges in the silicon oxynitride film are set to 5×1012 cm−2 or less, and the fixed charges in the interface between the silicon oxynitride film and the alumina film are set to 5×1012 cm−2 or more.

    摘要翻译： 提供了能够通过抑制由于固定电荷引起的载流子散射来降低MISFET中的功耗的技术。 在半导体基板和氧化铝膜之间的界面处形成物理厚度为1.5nm以上，相对介电常数为4.1以上的氮氧化硅膜。 由此构成由氧氮化硅膜和氧化铝膜构成的栅极绝缘体。 氮氧化硅膜是通过在NO或N 2 O气氛中进行在半导体衬底上形成的氧化硅膜的热处理而形成的。 以这种方式，将氧氮化硅膜中的固定电荷设定为5×10 12 -2 -2或更小，并且在氮氧化硅膜和 氧化铝膜设定为5×10 12 cm -2以上。

    Linear-reciprocating device
    5.
    发明授权
    Linear-reciprocating device 有权
    线性往复式装置

    公开(公告)号：US09074624B2

    公开(公告)日：2015-07-07

    申请号：US14365291

    申请日：2012-07-13

    申请人： Katsuyuki Horie ,  Shinichi Saito

    发明人： Katsuyuki Horie ,  Shinichi Saito

    IPC分类号： F16C29/06 ,  F16C29/00 ,  F16C29/02 ,  F16C29/04

    CPC分类号： F16C29/06 ,  F16C29/007 ,  F16C29/008 ,  F16C29/02 ,  F16C29/043 ,  F16C29/045 ,  F16C29/0602 ,  F16C29/0685

    摘要： A linear-reciprocating device 10 has a moving block 13 which is attached to a guide rail 12 provided to a support base 11 so as to freely reciprocate, ball rolling grooves 23a and 23b which form ball rolling paths 24a and 24b together with ball rolling grooves 21a and 21b are provided to a base end of the moving block 13, and ball circulation holes 25a and 25b which are communicated to the ball rolling paths 24a and 24b are provided to a base end. In a longitudinal-directional middle area of the moving block 13, return blocks 32a and 32b which communicate between the ball rolling paths 24a and 24b and the ball circulation holes 25a and 25b are provided. The moving block 13 moves to a position at which the moving block 13 is moved to a position at which the moving block is protruded from a distal end of the guide rail 12.

    摘要翻译： 线性往复运动装置10具有移动块13，该移动块13附接到设置在支撑基座11上以便自由往复运动的导轨12，与滚珠滚动槽一起形成滚珠滚动路径24a和24b的滚珠滚动槽23a和23b 21a和21b设置在移动块13的基端，并且连通到滚珠滚动路径24a和24b的滚珠循环孔25a和25b设置在基端。 在移动块13的纵向中间区域中，设置有滚珠滚动路径24a和24b与滚珠循环孔25a和25b连通的返回块32a和32b。 移动块13移动到移动块13移动到从导轨12的远端突出移动块的位置的位置。

    Semiconductor optical element
    6.
    发明授权
    Semiconductor optical element 有权
    半导体光学元件

    公开(公告)号：US09041080B2

    公开(公告)日：2015-05-26

    申请号：US14376662

    申请日：2012-08-02

    申请人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    发明人： Kazuki Tani ,  Shinichi Saito ,  Katsuya Oda

    IPC分类号： H01L29/00 ,  H01S5/32

    CPC分类号： H01S5/3223 ,  H01L33/34 ,  H01L33/38 ,  H01S5/0206 ,  H01S5/021 ,  H01S5/0424 ,  H01S5/1228 ,  H01S5/125 ,  H01S5/2272

    摘要： To provide a light-emitting element where electrons are efficiently injected into a Ge light emission layer and light can be efficiently emitted, the light-emitting element has a barrier layer 3 which is formed on an insulating film 2, worked in a size in which quantum confinement effect manifests and made of monocrystalline Si, a p-type diffused layer electrode 5 and an n-type diffused layer electrode 6 respectively provided at both ends of the barrier layer 3, and a monocrystalline Ge light emission part 13 provided on the barrier layer 3 between the electrodes 5, 6. At least a part of current that flows between the electrodes 5, 6 flows in the barrier layer 3 in a horizontal direction with respect to a substrate 1.

    摘要翻译： 为了提供一种发光元件，其中电子被有效地注入到Ge发光层中并且可以有效地发射光，发光元件具有形成在绝缘膜2上的阻挡层3，该阻挡层3以 量子限制效应表现为单晶Si，分别设置在阻挡层3的两端的p型扩散层电极5和n型扩散层电极6以及设置在势垒层3上的单晶Ge发光部13 在电极5,6之间流动的电流的至少一部分在阻挡层3中相对于基板1在水平方向上流动。

    SEMICONDUCTOR OPTICAL ELEMENT
    7.
    发明申请
    SEMICONDUCTOR OPTICAL ELEMENT 有权
    半导体光学元件

    公开(公告)号：US20140355636A1

    公开(公告)日：2014-12-04

    申请号：US14364074

    申请日：2011-12-12

    申请人： Tadashi Okumura ,  Shinichi Saito ,  Kazuki Tani ,  Etsuko Nomoto ,  Katsuya Oda

    发明人： Tadashi Okumura ,  Shinichi Saito ,  Kazuki Tani ,  Etsuko Nomoto ,  Katsuya Oda

    IPC分类号： H01S5/32 ,  H01L31/0352 ,  H01L31/028

    CPC分类号： H01L33/34 ,  H01L31/035272 ,  H01L31/103 ,  H01L33/44 ,  H01S5/021 ,  H01S5/2214 ,  H01S5/3211 ,  H01S5/3219 ,  H01S5/3223 ,  H01L2924/01032 ,  H01L2924/10252

    摘要： In order to provide a highly reliable silicon-germanium semiconductor optical element of high luminous efficiency or of low power consumption that can reduce or prevent the occurrence of dislocations or crystal defects on the interface between a light emitting layer or a light absorption layer and a cladding layer, in a silicon-germanium semiconductor optical element, a germanium protective layer 11 of non-light emission is disposed between a germanium light emitting layer or the light absorption layer 10 and a cladding layer 12 disposed above a substrate. The germanium protective layer 11 has the electrical conductivity different from electrical conductivity of the germanium light emitting layer or the light absorption layer 10.

    摘要翻译： 为了提供高发光效率或低功耗的高可靠性硅锗半导体光学元件，可以减少或防止在发光层或光吸收层与包层之间的界面上发生位错或晶体缺陷 在硅锗半导体光学元件中，在锗发光层或光吸收层10和设置在基板上方的包覆层12之间设置非发光锗保护层11。 锗保护层11具有与锗发光层或光吸收层10的电导率不同的导电性。

    Semiconductor photodiode device and manufacturing method thereof
    8.
    发明授权
    Semiconductor photodiode device and manufacturing method thereof 有权
    半导体光电二极管装置及其制造方法

    公开(公告)号：US08294213B2

    公开(公告)日：2012-10-23

    申请号：US12838445

    申请日：2010-07-17

    申请人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    发明人： Makoto Miura ,  Shinichi Saito ,  Youngkun Lee ,  Katsuya Oda

    IPC分类号： H01L21/00 ,  H01L21/331 ,  H01L27/12

    CPC分类号： H01L31/03921 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L31/028 ,  H01L31/103 ,  H01L31/1808 ,  Y02E10/547

    摘要： A semiconductor photodiode device includes a semiconductor substrate, a first buffer layer containing a material different from that of the semiconductor substrate in a portion thereof, a first semiconductor layer formed above the buffer layer and having a lattice constant different from that of the semiconductor substrate, a second buffer layer formed above the first semiconductor layer and containing an element identical with that of the first semiconductor layer in a portion thereof, and a second semiconductor layer formed above the buffer layer in which a portion of the first semiconductor layer is formed of a plurality of island shape portions each surrounded with an insulating film, and the second buffer layer allows adjacent islands of the first semiconductor layer to coalesce with each other and is in contact with the insulating film.

    摘要翻译： 半导体光电二极管装置包括半导体衬底，第一缓冲层，其部分含有不同于半导体衬底的材料;第一半导体层，形成在缓冲层上方，具有不同于半导体衬底的晶格常数; 第二缓冲层，形成在第一半导体层的上方，并且在其一部分中含有与第一半导体层相同的元件;以及第二半导体层，形成在缓冲层的上方，第一半导体层的一部分由 多个岛状部分，各自被绝缘膜包围，第二缓冲层允许第一半导体层的相邻岛状物彼此聚结并与绝缘膜接触。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US08089067B2

    公开(公告)日：2012-01-03

    申请号：US12318452

    申请日：2008-12-30

    申请人： Shinichi Saito ,  Hiroyuki Uchiyama ,  Toshiyuki Mine

    发明人： Shinichi Saito ,  Hiroyuki Uchiyama ,  Toshiyuki Mine

    IPC分类号： H01L33/00

    CPC分类号： H01L27/156 ,  H01L33/16 ,  H01L33/34

    摘要： A self emission silicon emission display is provided at a low price, which contains silicon and oxygen which exist in abundance on the earth as the main component and which can be easily formed by conventional silicon process. A light emission element includes a first electrode for injecting electrons, a second electrode for injecting holes, and a light emission part electrically connected to the first electrode and the second electrode, where the light emission part includes amorphous or polycrystalline silicon consisting of a single layer or plural layers and where the dimension of the silicon in at least one direction is controlled to be several nanometers.

    摘要翻译： 以低价格提供自发射硅发射显示器，其包含以地球上丰富地存在的硅和氧作为主要成分，并且可以通过常规硅工艺容易地形成。 发光元件包括用于注入电子的第一电极，用于注入空穴的第二电极和与第一电极和第二电极电连接的发光部分，其中发光部分包括由单层组成的非晶或多晶硅 或多个层，并且其中至少一个方向上的硅的尺寸被控制为几纳米。