发明授权
- 专利标题： Image sensor pixel having photodiode with indium pinning layer
- 专利标题（中）： 具有铟钉扎层的光电二极管的图像传感器像素
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申请号： US11004246申请日： 2004-12-03
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公开(公告)号： US07432543B2公开(公告)日： 2008-10-07
- 发明人: Howard E. Rhodes
- 申请人： Howard E. Rhodes
- 申请人地址： US CA Santa Clara
- 专利权人： OmniVision Technologies, Inc.
- 当前专利权人： OmniVision Technologies, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely Sokoloff Taylor & Zafman LLP
- 主分类号： H01L31/062
- IPC分类号： H01L31/062 ; H01L27/148
摘要：
An active pixel using a pinned photodiode with a pinning layer formed from indium is disclosed. The pixel comprises a photodiode formed in a semiconductor substrate. The photodiode is an N− region formed within a P-type region. A pinning layer formed from indium is then formed at the surface of the N− region. Further, the pixel includes a transfer transistor formed between the photodiode and a floating node and selectively operative to transfer a signal from the photodiode to the floating node. Finally, the pixel includes an amplification transistor controlled by the floating node.
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