发明授权
US07432547B2 Non-volatile memory device with improved data retention and method therefor
有权
具有改进的数据保留的非易失性存储器件及其方法
- 专利标题： Non-volatile memory device with improved data retention and method therefor
- 专利标题（中）： 具有改进的数据保留的非易失性存储器件及其方法
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申请号： US10779004申请日： 2004-02-13
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公开(公告)号： US07432547B2公开(公告)日： 2008-10-07
- 发明人: Gowrishankar L. Chindalore , Frank K. Baker, Jr. , Paul A. Ingersoll , Alexander B. Hoefler
- 申请人： Gowrishankar L. Chindalore , Frank K. Baker, Jr. , Paul A. Ingersoll , Alexander B. Hoefler
- 申请人地址： US TX Austin
- 专利权人： Freescale Semiconductor, Inc.
- 当前专利权人： Freescale Semiconductor, Inc.
- 当前专利权人地址： US TX Austin
- 代理商 Daniel D. Hill
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238
摘要：
A semiconductor device (30) comprises an underlying insulating layer (34), an overlying insulating layer (42) and a charge storage layer (36) between the insulating layers (34, 42). The charge storage layer (36) and the overlying insulating layer (42) form an interface, where at least a majority of charge in the charge storage layer (36) is stored. This can be accomplished by forming a charge storage layer (36) with different materials such as silicon and silicon germanium layers or n-type and p-type material layers, in one embodiment. In another embodiment, the charge storage layer (36) comprises a dopant that is graded. By storing at least a majority of the charge at the interface between the charge storage layer (36) and the overlying insulating layer (42), the leakage of charge through the underlying insulating layer is decreased allowing for a thinner underlying insulating layer (34) to be used.
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