发明授权
- 专利标题： Semiconductor memory device storing redundant replacement information with small occupation area
- 专利标题（中）： 半导体存储器件存储具有小占用面积的冗余替换信息
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申请号： US11765551申请日： 2007-06-20
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公开(公告)号： US07433251B2公开(公告)日： 2008-10-07
- 发明人: Masaru Haraguchi , Takeshi Fujino
- 申请人： Masaru Haraguchi , Takeshi Fujino
- 申请人地址： JP Tokyo
- 专利权人： Renesas Technology Corp.
- 当前专利权人： Renesas Technology Corp.
- 当前专利权人地址： JP Tokyo
- 代理机构： Leydig, Voit & Mayer, Ltd.
- 优先权： JP2002-221763 20020730
- 主分类号： G11C7/00
- IPC分类号： G11C7/00 ; G11C8/00
摘要：
Column redundancy data storage circuit blocks storing column redundancy data for repairing defective columns are arranged in correspondence to memory cell array blocks, respectively. The storage data of the column redundancy data storage circuits is transferred to redundancy data hold circuits arranged in spare column decoder bands adjacent to the data paths for transferring internal data, and are decoded for selection of a page in the spare decoder bands in column access. Therefore, it is possible to reduce the occupation area of a fuse program circuit which programs redundancy data for repairing a defective column.