发明授权
US07435610B2 Fabrication of array pH sensitive EGFET and its readout circuit
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阵列pH敏感EGFET及其读出电路的制作
- 专利标题: Fabrication of array pH sensitive EGFET and its readout circuit
- 专利标题(中): 阵列pH敏感EGFET及其读出电路的制作
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申请号: US11342185申请日: 2006-01-26
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公开(公告)号: US07435610B2公开(公告)日: 2008-10-14
- 发明人: Shen-Kan Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Chung-We Pan , Jing-Sheng Chiang
- 申请人: Shen-Kan Hsiung , Jung-Chuan Chou , Tai-Ping Sun , Chung-We Pan , Jing-Sheng Chiang
- 申请人地址: TW Jungli
- 专利权人: Chung Yuan Christian University
- 当前专利权人: Chung Yuan Christian University
- 当前专利权人地址: TW Jungli
- 代理机构: Apex Junis, pllc
- 代理商 Tracy M Heims
- 主分类号: H01L21/00
- IPC分类号: H01L21/00
摘要:
A method for fabricating an array pH sensor and a readout circuit device of such array pH sensor are implemented by utilizing an extended ion sensitive field effect transistor to construct the array pH sensor and related readout circuit. The structure of the array sensor having this extended ion sensitive field effect transistor comprises a tin dioxide/metal/silicon dioxide multi-layer structure sensor and a tin dioxide/indium tin oxide/glass multi-layer structure sensor and has excellent properties. Furthermore, the readout circuit and the sensor utilize two signal generators for controlling and reading signals. In particular, the sensor can be effective for increasing the accuracy of measurement and reducing the interference of noise.
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