发明授权
US07435978B2 System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device
有权
用于校正用于光刻和观察的带电粒子束的控制条件的系统，方法和程序，以及用于制造半导体器件的程序和方法
- 专利标题： System, method and a program for correcting conditions for controlling a charged particle beam for lithography and observation, and a program and method for manufacturing a semiconductor device
- 专利标题（中）： 用于校正用于光刻和观察的带电粒子束的控制条件的系统，方法和程序，以及用于制造半导体器件的程序和方法
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申请号： US11239428申请日： 2005-09-30
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公开(公告)号： US07435978B2公开(公告)日： 2008-10-14
- 发明人: Tetsuro Nakasugi , Takumi Ota
- 申请人： Tetsuro Nakasugi , Takumi Ota
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- 优先权： JP2004-298681 20041013
- 主分类号： H01J37/153
- IPC分类号： H01J37/153
摘要：
A system for correcting a charged particle beam lithography condition including: an error calculation unit configured to calculate an error in an illumination position of a charged particle beam, the charged particle beam is controlled by a lithography condition corrected by initial correction parameters; a temporary correction unit configured to calculate temporary correction parameters to decrease the error to a minimum; and a main correction unit configured to calculate main correction parameters correcting the lithography condition, by executing statistical processing using the temporary correction parameters and the initial correction parameters.
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