Invention Grant
- Patent Title: Tri-gated molecular field effect transistor and method of fabricating the same
- Patent Title (中): 三门分子场效应晶体管及其制造方法
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Application No.: US11135285Application Date: 2005-05-24
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Publication No.: US07436033B2Publication Date: 2008-10-14
- Inventor: Chan Woo Park , Sung Yool Choi , Han Young Yu , Ung Hwan Pi
- Applicant: Chan Woo Park , Sung Yool Choi , Han Young Yu , Ung Hwan Pi
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: KR10-2004-0094585 20041118
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L35/24 ; H01L51/00 ; H01L27/01

Abstract:
A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.
Public/Granted literature
- US20060102889A1 Tri-gated molecular field effect transistor and method of fabricating the same Public/Granted day:2006-05-18
Information query
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