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11 条记录 (耗时 0.028 秒)

    Nanowire sensor and method of manufacturing the same
    1.
    发明申请
    Nanowire sensor and method of manufacturing the same 审中-公开
    纳米线传感器及其制造方法

    公开(公告)号：US20060131574A1

    公开(公告)日：2006-06-22

    申请号：US11182572

    申请日：2005-07-15

    申请人： Han Young Yu ,  Ung Hwan Pi ,  Chan Woo Park ,  Sung Yool Choi

    发明人： Han Young Yu ,  Ung Hwan Pi ,  Chan Woo Park ,  Sung Yool Choi

    IPC分类号： H01L21/66 ,  H01L23/58

    CPC分类号： G01L21/12

    摘要： Provided are a nanowire sensor and a method of manufacturing the same. The nanowire sensor includes: a sensing target system comprising a target element to be detected; two electrodes separated from each other contained in the sensing target system; vanadium oxide (V2O5) nanowires incorporated in the sensing target system and attached to the two electrodes; and a measuring unit for measuring a change in resistance of the nanowires as the nanowires detect the target element.

    摘要翻译： 提供一种纳米线传感器及其制造方法。 纳米线传感器包括：感测目标系统，包括要检测的目标元件; 包含在感测目标系统中的彼此分开的两个电极; 氧化钒（V 2 O 5 O）纳米线并入感测目标系统并连接到两个电极上; 以及测量单元，用于当纳米线检测到目标元件时测量纳米线的电阻变化。

    Tri-gated molecular field effect transistor and method of fabricating the same
    3.
    发明申请
    Tri-gated molecular field effect transistor and method of fabricating the same 失效
    三门分子场效应晶体管及其制造方法

    公开(公告)号：US20060102889A1

    公开(公告)日：2006-05-18

    申请号：US11135285

    申请日：2005-05-24

    申请人： Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    发明人： Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    IPC分类号： H01L29/06

    CPC分类号： B82Y10/00 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

    摘要： Provided is a tri-gated molecular field effect transistor (FET) and a method of fabricating the same. The tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.

    摘要翻译： 提供三门分子场效应晶体管（FET）及其制造方法。 三门分子场效应晶体管包括形成在衬底上的栅电极，在源极区，漏区和沟道区中具有沟槽，以及在沟道区中插入在源极和漏极之间的至少一个分子。 可以使栅极电压对通过沟道的电子的影响最大化，并且可以大大提高源极和漏极之间相对于栅极电压提供的电流的变化增益。 因此，可以获得具有高功能性和可靠性的分子电子电路。

    Tri-gated molecular field effect transistor and method of fabricating the same
    5.
    发明授权
    Tri-gated molecular field effect transistor and method of fabricating the same 失效
    三门分子场效应晶体管及其制造方法

    公开(公告)号：US07436033B2

    公开(公告)日：2008-10-14

    申请号：US11135285

    申请日：2005-05-24

    申请人： Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    发明人： Chan Woo Park ,  Sung Yool Choi ,  Han Young Yu ,  Ung Hwan Pi

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L35/24 ,  H01L51/00 ,  H01L27/01

    CPC分类号： B82Y10/00 ,  H01L51/0545 ,  H01L51/0595 ,  Y10S977/936 ,  Y10S977/937 ,  Y10S977/938

    摘要： A tri-gated molecular field effect transistor includes a gate electrode formed on a substrate and having grooves in a source region, a drain region and a channel region, and at least one molecule inserted between the source and drain electrodes in the channel region. The effects of the gate voltage on electrons passing through the channel can be maximized, and a variation gain of current supplied between the source and drain electrodes relative to the gate voltage can be greatly increased. Thus, a molecular electronic circuit having high functionality and reliability can be obtained.

    摘要翻译： 三门分子场效应晶体管包括形成在衬底上的栅电极，在源极区，漏区和沟道区中具有沟槽，以及至少一个分子插入在沟道区中的源极和漏极之间。 可以使栅极电压对通过沟道的电子的影响最大化，并且可以大大提高源极和漏极之间相对于栅极电压提供的电流的变化增益。 因此，可以获得具有高功能性和可靠性的分子电子电路。

    Field emission display device
    8.
    发明授权
    Field emission display device 有权
    场致发射显示装置

    公开(公告)号：US06204608B1

    公开(公告)日：2001-03-20

    申请号：US09442486

    申请日：1999-11-18

    申请人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

    发明人： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Sung Yool Choi ,  Kyoung Ik Cho

    IPC分类号： G09G330

    CPC分类号： G09G3/22 ,  G09G2300/0842

    摘要： A field emission display device is disclosed. The device comprises an upper plate and a lower plate that are vacuum-packaged in parallel, wherein the lower plate is composed of matrix-addressable pixels, wherein the pixel formed on an insulation substrate comprises a field emitter array, a control thin-film transistor having a drain connected to an emitter electrode of the emitter array, and an addressing thin-film transistor having a drain connected to a gate electrode of the control thin-film transistor. Designing the control thin-film transistor to have a large parasitic capacitance between the source and the gate, one can obtain an active matrix display having a memory function and eliminate a conventional complex fabricating process of a memory capacitor, thereby simplify a panel fabricating process remarkably and largely increase the aperture ratio of a pixel. Furthermore, in the present invention, introducing glass for a substrate material instead of conventional single crystal silicon wafer, one can cheaply produce a large size panel and easily carry out a vacuum packaging that is indispensable for fabricating a field emission display.

    摘要翻译： 公开了一种场致发射显示装置。 该装置包括平行真空包装的上板和下板，其中下板由可矩阵寻址的像素组成，其中形成在绝缘基板上的像素包括场致发射阵列，控制薄膜晶体管 具有连接到发射极阵列的发射极的漏极，以及具有连接到控制薄膜晶体管的栅电极的漏极的寻址薄膜晶体管。 将控制薄膜晶体管设计成在源极和栅极之间具有大的寄生电容，可以获得具有存储功能的有源矩阵显示器，并消除了存储电容器的常规复杂制造工艺，从而显着地简化了面板制造工艺 并大大提高像素的开口率。 此外，在本发明中，为了代替传统的单晶硅晶片引入用于基板材料的玻璃，可以廉价地生产大尺寸面板，并且容易地实现对于制造场致发射显示器而言不可或缺的真空包装。

    Field emission devices using carbon nanotubes and method thereof
    9.
    发明授权
    Field emission devices using carbon nanotubes and method thereof 失效

    公开(公告)号：US06605894B2

    公开(公告)日：2003-08-12

    申请号：US09871992

    申请日：2001-05-31

    申请人： Sung Yool Choi ,  Kyoung Ik Cho

    发明人： Sung Yool Choi ,  Kyoung Ik Cho

    IPC分类号： H01J162

    CPC分类号： B82Y10/00 ,  H01J1/304 ,  H01J2201/30469 ,  Y10S977/939

    摘要： A field emission device using carbon nanotubes grown in a direction parallel to a substrate and a method of manufacturing a high definition field emission display using an edge emitting luminescent thin film. The device includes a process of selectively depositing a metal catalyst on a sidewall of the pattern to grow the carbon nanotube in a direction parallel to the metal catalyst and a process of attaching the grown carbon nanotube on the main board by application process, so that it can be freely applied in a subsequent process. The device employs a carbon nanotube field emission emitter and an edge emitting in a high fine luminescent body deposited in a thin film type. Thus, a close relationship with the substrate can be maintained due to the horizontally grown carbon nanotubes, a subsequent semiconductor process can be freely applied using a thin film type luminescent body, and a high fine field emission display can be thus manufactured.