发明授权
- 专利标题： High-pressure phase silicon nitride having a cubic spinel structure and the manufacturing method
- 专利标题（中）： 具有立方尖晶石结构的高压相氮化硅及其制造方法
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申请号： US10830852申请日： 2004-04-23
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公开(公告)号： US07438883B2公开(公告)日： 2008-10-21
- 发明人: Kenji Ito , Katsuhiko Takahashi , Toshimori Sekine
- 申请人： Kenji Ito , Katsuhiko Takahashi , Toshimori Sekine
- 申请人地址： JP Tokyo JP Ibaraki-Ken
- 专利权人： NOF Corporation,National Institute for Materials
- 当前专利权人： NOF Corporation,National Institute for Materials
- 当前专利权人地址： JP Tokyo JP Ibaraki-Ken
- 代理机构： Sheridan Ross P.C.
- 优先权： JP2003-118493 20030423
- 主分类号： C01B21/06
- IPC分类号： C01B21/06 ; C01B21/068 ; C01B33/00
摘要：
A method for preparing a high-pressure phase cubic spinel-type silicon nitride includes housing a molding containing low-pressure phase silicon nitride powder and a metal powder in a cylindrical container, arranging an explosive in the cylindrical container so as to surround the molding, and exploding the explosive to compress the molding. An X-ray diffraction pattern of the high-pressure phase cubic spinel-type silicon nitride produced according to the method of the present invention shows a maximum peak having a full width at half maximum of 0.65 degrees or less. TG-DTA analysis of the cubic spinel-type silicon nitride shows a weight change starting temperature of 700 to 1100° C.
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