发明授权
- 专利标题： Conductive memory stack with non-uniform width
- 专利标题（中）： 具有不均匀宽度的导电存储器堆叠
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申请号： US11369663申请日： 2006-03-06
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公开(公告)号： US07439082B2公开(公告)日： 2008-10-21
- 发明人: Darrell Rinerson , Steven W. Longcor , Steve Kuo-Ren Hsia
- 申请人： Darrell Rinerson , Steven W. Longcor , Steve Kuo-Ren Hsia
- 专利权人： Unity Semiconductor Corporation
- 当前专利权人： Unity Semiconductor Corporation
- 主分类号： H01L21/8242
- IPC分类号： H01L21/8242
摘要：
A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom electrode can be described as having a top face with a first surface area, the top electrode has a bottom face with a second surface area and the multi-resistive state element has a bottom face with a third surface area and a top face with a fourth surface area. The multi-resistive state element's bottom face is in contact with the bottom electrode's top face and the multi-resistive state element's top face is in contact with the top electrode's bottom face. Furthermore, the fourth surface area is not equal to the second surface area.
公开/授权文献
- US20060166430A1 Conductive memory stack with non-uniform width 公开/授权日：2006-07-27
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