- 专利标题: Transistors, semiconductor integrated circuit interconnections and methods of forming the same
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申请号: US11704364申请日: 2007-02-09
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公开(公告)号: US07439581B2公开(公告)日: 2008-10-21
- 发明人: Seong-Goo Kim , Kang-Yoon Lee , Yun-Gi Kim , Bong-Soo Kim
- 申请人: Seong-Goo Kim , Kang-Yoon Lee , Yun-Gi Kim , Bong-Soo Kim
- 申请人地址: KR Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: Harness, Dickey & Pierce, P.L.C.
- 优先权: KR10-2006-0087969 20060912
- 主分类号: H01L29/76
- IPC分类号: H01L29/76
摘要:
Provided are transistors, semiconductor integrated circuit interconnections and methods of forming the same. The transistors, semiconductor integrated circuit interconnections and methods of forming the same may improve electrical characteristics between gate electrodes or interconnection electrodes and simplify a semiconductor fabrication process related to gate electrodes or interconnection electrodes. A material layer having first and second regions may be prepared. A trench may be formed in a selected portion of the first region. Transistors or semiconductor integrated circuit interconnections may be in the first and second regions, respectively. One of the transistors or the semiconductor integrated circuit interconnections may be formed in the trench. The transistors or the semiconductor integrated circuit interconnections may be electrically insulated from each other.