发明授权
- 专利标题: Vertical GaN-based LED and method of manufacturing the same
- 专利标题(中): 垂直GaN基LED及其制造方法
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申请号: US11878503申请日: 2007-07-25
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公开(公告)号: US07442569B2公开(公告)日: 2008-10-28
- 发明人: Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
- 申请人: Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
- 申请人地址: KR Gyunggi-Do
- 专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人: Samsung Electro-Mechanics Co., Ltd.
- 当前专利权人地址: KR Gyunggi-Do
- 代理机构: McDermott Will & Emery LLP
- 优先权: KR10-2005-0066616 20050722
- 主分类号: H01L21/00
- IPC分类号: H01L21/00 ; H01L29/22
摘要:
Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.