Invention Grant
- Patent Title: Method for constructing contact formations
- Patent Title (中): 构造接触层的方法
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Application No.: US11019857Application Date: 2004-12-21
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Publication No.: US07442634B2Publication Date: 2008-10-28
- Inventor: Valery M. Dubin , Tzuen-Luh Huang , Ming Fang , Kevin J. Lee , Yuehai Liang , Margherita Chang
- Applicant: Valery M. Dubin , Tzuen-Luh Huang , Ming Fang , Kevin J. Lee , Yuehai Liang , Margherita Chang
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metallic ions and an accelerator. The accelerator may include at least one of bis-(sodium sulfopropyl)-disulfide and 3-mercapto-1-propanesulfonic acid-sodium salt. A voltage may be applied across the electrolytic solution and the conductive portion of the substrate to cause the metallic ions to be changed into metallic particles and deposited on the conductive portion. The electrolytic solution may also include a protonated organic additive. The electrolytic solution may also include an acid and a surfactant. The acid may include at least one of sulfuric acid, methane sulfonic acid, benzene sulfonic acid, and picryl sulfonic acid. The surfactant may include at least one of polyethylene glycol and polypropylene glycol.
Public/Granted literature
- US20060134902A1 Method for constructing contact formations Public/Granted day:2006-06-22
Information query
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