公开(公告)号：US07442634B2

公开(公告)日：2008-10-28

申请号：US11019857

申请日：2004-12-21

申请人： Valery M. Dubin ,  Tzuen-Luh Huang ,  Ming Fang ,  Kevin J. Lee ,  Yuehai Liang ,  Margherita Chang

发明人： Valery M. Dubin ,  Tzuen-Luh Huang ,  Ming Fang ,  Kevin J. Lee ,  Yuehai Liang ,  Margherita Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  C25D3/02 ,  C25D3/38 ,  C25D5/10 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/0496

摘要： According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metallic ions and an accelerator. The accelerator may include at least one of bis-(sodium sulfopropyl)-disulfide and 3-mercapto-1-propanesulfonic acid-sodium salt. A voltage may be applied across the electrolytic solution and the conductive portion of the substrate to cause the metallic ions to be changed into metallic particles and deposited on the conductive portion. The electrolytic solution may also include a protonated organic additive. The electrolytic solution may also include an acid and a surfactant. The acid may include at least one of sulfuric acid, methane sulfonic acid, benzene sulfonic acid, and picryl sulfonic acid. The surfactant may include at least one of polyethylene glycol and polypropylene glycol.

摘要翻译： 根据本发明的一个方面，提供了形成接触层的方法。 衬底可以放置在电解溶液中。 基板可以具有暴露的导电部分，电解液可以包括多个金属离子和加速器。 促进剂可以包括双 - （磺基磺基丙基） - 二硫化物和3-巯基-1-丙磺酸钠盐中的至少一种。 可以在电解液和基板的导电部分之间施加电压，以使金属离子变成金属颗粒并沉积在导电部分上。 电解液还可以包括质子化的有机添加剂。 电解液还可以包含酸和表面活性剂。 酸可以包括硫酸，甲磺酸，苯磺酸和苦基磺酸中的至少一种。 表面活性剂可以包括聚乙二醇和聚丙二醇中的至少一种。

公开(公告)号：US20060134902A1

公开(公告)日：2006-06-22

申请号：US11019857

申请日：2004-12-21

申请人： Valery Dubin ,  Tzuen-Luh Huang ,  Ming Fang ,  Kevin Lee ,  Yuehai Liang ,  Margherita Chang

发明人： Valery Dubin ,  Tzuen-Luh Huang ,  Ming Fang ,  Kevin Lee ,  Yuehai Liang ,  Margherita Chang

IPC分类号： H01L21/44

CPC分类号： H01L21/2885 ,  C25D3/02 ,  C25D3/38 ,  C25D5/10 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01011 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/00014 ,  H01L2924/0496

摘要： According to one aspect of the invention, a method for forming contact formations is provided. A substrate may be placed in an electrolytic solution. The substrate may have an exposed conductive portion and the electrolytic solution may include a plurality of metallic ions and an accelerator. The accelerator may include at least one of bis-(sodium sulfopropyl)-disulfide and 3-mercapto-1-propanesulfonic acid-sodium salt. A voltage may be applied across the electrolytic solution and the conductive portion of the substrate to cause the metallic ions to be changed into metallic particles and deposited on the conductive portion. The electrolytic solution may also include a protonated organic additive. The electrolytic solution may also include an acid and a surfactant. The acid may include at least one of sulfuric acid, methane sulfonic acid, benzene sulfonic acid, and picryl sulfonic acid. The surfactant may include at least one of polyethylene glycol and polypropylene glycol.

摘要翻译： 根据本发明的一个方面，提供了形成接触层的方法。 衬底可以放置在电解溶液中。 基板可以具有暴露的导电部分，电解液可以包括多个金属离子和加速器。 促进剂可以包括双 - （磺基磺基丙基） - 二硫化物和3-巯基-1-丙磺酸钠盐中的至少一种。 可以在电解液和基板的导电部分之间施加电压，以使金属离子变成金属颗粒并沉积在导电部分上。 电解液还可以包括质子化的有机添加剂。 电解液还可以包含酸和表面活性剂。 酸可以包括硫酸，甲磺酸，苯磺酸和苦基磺酸中的至少一种。 表面活性剂可以包括聚乙二醇和聚丙二醇中的至少一种。

公开(公告)号：US20050212133A1

公开(公告)日：2005-09-29

申请号：US10812464

申请日：2004-03-29

申请人： John Barnak ,  Gerald Feldewerth ,  Ming Fang ,  Kevin Lee ,  Tzuen-Luh Huang ,  Harry Liang ,  Seshu Sattiraju ,  Margherita Chang ,  Andrew Yeoh

发明人： John Barnak ,  Gerald Feldewerth ,  Ming Fang ,  Kevin Lee ,  Tzuen-Luh Huang ,  Harry Liang ,  Seshu Sattiraju ,  Margherita Chang ,  Andrew Yeoh

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

摘要翻译： 制造凸起下金属化结构的装置和方法包括邻接导电垫的粘附层，邻接粘合层的含钼阻挡层，邻接含钼阻挡层的润湿层和邻接润湿剂的高锡含量焊料 层。 润湿层可以基本上包含在形成金属间化合物层的高含量焊料中。 含钼阻挡层防止高锡含量焊料材料中的锡的移动不会迁移到邻接导电焊盘的电介质层，并可能导致分层和/或攻击可能存在的任何下面的结构，特别是铜结构。

公开(公告)号：US07064446B2

公开(公告)日：2006-06-20

申请号：US10812464

申请日：2004-03-29

申请人： John P. Barnak ,  Gerald B. Feldewerth ,  Ming Fang ,  Kevin J. Lee ,  Tzuen-Luh Huang ,  Harry Y. Liang ,  Seshu V. Sattiraju ,  Margherita Chang ,  Andrew W. H. Yeoh

发明人： John P. Barnak ,  Gerald B. Feldewerth ,  Ming Fang ,  Kevin J. Lee ,  Tzuen-Luh Huang ,  Harry Y. Liang ,  Seshu V. Sattiraju ,  Margherita Chang ,  Andrew W. H. Yeoh

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

摘要翻译： 制造凸起下金属化结构的装置和方法包括邻接导电垫的粘附层，邻接粘合层的含钼阻挡层，邻接含钼阻挡层的润湿层和邻接润湿剂的高锡含量焊料 层。 润湿层可以基本上包含在形成金属间化合物层的高含量焊料中。 含钼阻挡层防止高锡含量焊料材料中的锡的移动不会迁移到邻接导电焊盘的电介质层，并可能导致分层和/或攻击可能存在的任何下面的结构，特别是铜结构。

公开(公告)号：US20050250323A1

公开(公告)日：2005-11-10

申请号：US11181610

申请日：2005-07-13

申请人： John Barnak ,  Gerald Feldewerth ,  Ming Fang ,  Kevin Lee ,  Tzuen-Luh Huang ,  Harry Liang ,  Seshu Sattiraju ,  Margherita Chang ,  Andrew Yeoh

发明人： John Barnak ,  Gerald Feldewerth ,  Ming Fang ,  Kevin Lee ,  Tzuen-Luh Huang ,  Harry Liang ,  Seshu Sattiraju ,  Margherita Chang ,  Andrew Yeoh

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L21/44

CPC分类号： H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

摘要： Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

摘要翻译： 制造凸起下金属化结构的装置和方法包括邻接导电垫的粘附层，邻接粘合层的含钼阻挡层，邻接含钼阻挡层的润湿层和邻接润湿剂的高锡含量焊料 层。 润湿层可以基本上包含在形成金属间化合物层的高含量焊料中。 含钼阻挡层防止高锡含量焊料材料中的锡的移动不会迁移到邻接导电焊盘的电介质层，并可能导致分层和/或攻击可能存在的任何下面的结构，特别是铜结构。