Invention Grant
US07442971B2 Self-biasing transistor structure and an SRAM cell having less than six transistors
有权
自偏压晶体管结构和具有小于六个晶体管的SRAM单元
- Patent Title: Self-biasing transistor structure and an SRAM cell having less than six transistors
- Patent Title (中): 自偏压晶体管结构和具有小于六个晶体管的SRAM单元
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Application No.: US11045177Application Date: 2005-01-28
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Publication No.: US07442971B2Publication Date: 2008-10-28
- Inventor: Frank Wirbeleit , Manfred Horstmann , Christian Hobert
- Applicant: Frank Wirbeleit , Manfred Horstmann , Christian Hobert
- Applicant Address: US TX Austin
- Assignee: Advanced Micro Devices, Inc.
- Current Assignee: Advanced Micro Devices, Inc.
- Current Assignee Address: US TX Austin
- Agency: Williams, Morgan & Amerson, P.C.
- Priority: DE102004037087 20040730
- Main IPC: H01L31/112
- IPC: H01L31/112
Abstract:
By providing a self-biasing semiconductor switch, an SRAM cell having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor that allows the formation of an SRAM cell with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements.
Public/Granted literature
- US20060022282A1 Self-biasing transistor structure and an SRAM cell having less than six transistors Public/Granted day:2006-02-02
Information query
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