发明授权
US07442983B2 Method for making a semiconductor device having a high-k gate dielectric
有权
制造具有高k栅极电介质的半导体器件的方法
- 专利标题： Method for making a semiconductor device having a high-k gate dielectric
- 专利标题（中）： 制造具有高k栅极电介质的半导体器件的方法
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申请号： US11390892申请日： 2006-03-27
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公开(公告)号： US07442983B2公开(公告)日： 2008-10-28
- 发明人: Mark L. Doczy , Gilbert Dewey , Suman Datta , Sangwoo Pae , Justin K. Brask , Jack Kavalieros , Matthew V. Metz , Adrian B. Sherrill , Markus Kuhn , Robert S. Chau
- 申请人： Mark L. Doczy , Gilbert Dewey , Suman Datta , Sangwoo Pae , Justin K. Brask , Jack Kavalieros , Matthew V. Metz , Adrian B. Sherrill , Markus Kuhn , Robert S. Chau
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L27/108
- IPC分类号： H01L27/108
摘要：
A method for making a semiconductor device is described. That method comprises forming an oxide layer on a substrate, and forming a high-k dielectric layer on the oxide layer. The oxide layer and the high-k dielectric layer are then annealed at a sufficient temperature for a sufficient time to generate a gate dielectric with a graded dielectric constant.
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