Invention Grant
US07443732B2 High performance flash memory device capable of high density data storage
有权
高性能闪存设备能够进行高密度数据存储
- Patent Title: High performance flash memory device capable of high density data storage
- Patent Title (中): 高性能闪存设备能够进行高密度数据存储
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Application No.: US11229527Application Date: 2005-09-20
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Publication No.: US07443732B2Publication Date: 2008-10-28
- Inventor: Tiao-Hua Kuo , Nancy Leong , Nian Yang , Guowei Wang , Aaron Lee , Sachit Chandra , Michael A. VanBuskirk , Johnny Chen , Darlene Hamilton , Binh Quang Le
- Applicant: Tiao-Hua Kuo , Nancy Leong , Nian Yang , Guowei Wang , Aaron Lee , Sachit Chandra , Michael A. VanBuskirk , Johnny Chen , Darlene Hamilton , Binh Quang Le
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Harrity & Harrity, LLP
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
A method is provided for programming a nonvolatile memory array including an array of memory cells, where each memory cell including a substrate, a control gate, a charge storage element, a source region and a drain region. The method includes receiving a programming window containing a predetermined number of bits that are to be programmed in the array and determining which of the predetermined number of bits are to be programmed in the memory array. The predetermined number of bits are simultaneously programmed to corresponding memory cells in the array. A programming state of the predetermined number of bits in the array is simultaneously verified.
Public/Granted literature
- US20070064464A1 High performance flash memory device capable of high density data storage Public/Granted day:2007-03-22
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