Invention Grant
- Patent Title: High-density plasma source
- Patent Title (中): 高密度等离子体源
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Application No.: US10553893Application Date: 2004-04-07
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Publication No.: US07446479B2Publication Date: 2008-11-04
- Inventor: Roman Chistyakov
- Applicant: Roman Chistyakov
- Applicant Address: US MA Mansfield
- Assignee: Zond, Inc.
- Current Assignee: Zond, Inc.
- Current Assignee Address: US MA Mansfield
- Agency: Rauschenbach Patent Law Group, LLC
- Agent Kurt Rauschenbach
- International Application: PCT/US2004/010724 WO 20040407
- International Announcement: WO2004/095497 WO 20041104
- Main IPC: H01J7/24
- IPC: H01J7/24

Abstract:
The present invention relates to a plasma source. The plasma source includes a cathode assembly having an inner cathode section and an outer cathode section. An anode is positioned adjacent to the outer cathode section so as to form a gap there between. A first power supply generates a first electric field across the gap between the anode and the outer cathode section. The first electric field ionizes a volume of feed gas that is located in the gap, thereby generating an initial plasma. A second power supply generates a second electric field proximate to the inner cathode section. The second electric field super-ionizes the initial plasma to generate a plasma comprising a higher density of ions than the initial plasma.
Public/Granted literature
- US20070034497A1 High-density plasma source Public/Granted day:2007-02-15
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