Invention Grant
US07446479B2 High-density plasma source 有权
高密度等离子体源

  • Patent Title: High-density plasma source
  • Patent Title (中): 高密度等离子体源
  • Application No.: US10553893
    Application Date: 2004-04-07
  • Publication No.: US07446479B2
    Publication Date: 2008-11-04
  • Inventor: Roman Chistyakov
  • Applicant: Roman Chistyakov
  • Applicant Address: US MA Mansfield
  • Assignee: Zond, Inc.
  • Current Assignee: Zond, Inc.
  • Current Assignee Address: US MA Mansfield
  • Agency: Rauschenbach Patent Law Group, LLC
  • Agent Kurt Rauschenbach
  • International Application: PCT/US2004/010724 WO 20040407
  • International Announcement: WO2004/095497 WO 20041104
  • Main IPC: H01J7/24
  • IPC: H01J7/24
High-density plasma source
Abstract:
The present invention relates to a plasma source. The plasma source includes a cathode assembly having an inner cathode section and an outer cathode section. An anode is positioned adjacent to the outer cathode section so as to form a gap there between. A first power supply generates a first electric field across the gap between the anode and the outer cathode section. The first electric field ionizes a volume of feed gas that is located in the gap, thereby generating an initial plasma. A second power supply generates a second electric field proximate to the inner cathode section. The second electric field super-ionizes the initial plasma to generate a plasma comprising a higher density of ions than the initial plasma.
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