Invention Grant
- Patent Title: Gallium nitride-based semiconductor device
- Patent Title (中): 氮化镓基半导体器件
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Application No.: US10591585Application Date: 2005-03-03
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Publication No.: US07453091B2Publication Date: 2008-11-18
- Inventor: Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
- Applicant: Masato Kobayakawa , Hideki Tomozawa , Hisayuki Miki
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2004-060495 20040304
- International Application: PCT/JP2005/004140 WO 20050303
- International Announcement: WO2005/086242 WO 20050915
- Main IPC: H01L29/26
- IPC: H01L29/26
Abstract:
A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.
Public/Granted literature
- US20070187693A1 Gallium nitride-based semiconductor device Public/Granted day:2007-08-16
Information query
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