公开(公告)号：US20080230800A1

公开(公告)日：2008-09-25

申请号：US10585744

申请日：2005-04-27

Applicant: Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

Inventor： Akira Bandoh ,  Hiromitsu Sakai ,  Masato Kobayakawa ,  Mineo Okuyama ,  Hideki Tomozawa ,  Hisayuki Miki ,  Joseph Gaze ,  Syunji Horikawa ,  Tetsuo Sakurai

IPC: H01L33/00 ,  H01L29/22 ,  H01L21/205

CPC classification number: H01L33/025 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/32

Abstract: An object of the present invention is to provide a low-resistance n-type Group III nitride semiconductor layered structure having excellent flatness and few pits. The inventive n-type group III nitride semiconductor layered structure comprises a substrate and, stacked on the substrate, an n-type impurity concentration periodic variation layer comprising an n-type impurity atom higher concentration layer and an n-type impurity atom lower concentration layer, said lower concentration layer being stacked on said higher concentration layer.

Abstract translation: 本发明的目的是提供一种具有优异的平坦度和很少凹坑的低电阻n型III族氮化物半导体层状结构。 本发明的n型III族氮化物半导体层状结构包括基板，并且在基板上堆叠包括n型杂质原子较高浓度层和n型杂质原子较低浓度层的n型杂质浓度周期性变化层 所述低浓度层堆叠在所述较高浓度层上。

公开(公告)号：US5783251A

公开(公告)日：1998-07-21

申请号：US863831

申请日：1997-05-27

Applicant: Hideki Tomozawa ,  Yoshihiro Saida ,  Junya Kato ,  Yukie Akakabe ,  Yoshiaki Ikenoue ,  Reiko Ichikawa

Inventor： Hideki Tomozawa ,  Yoshihiro Saida ,  Junya Kato ,  Yukie Akakabe ,  Yoshiaki Ikenoue ,  Reiko Ichikawa

IPC: C08G75/00 ,  C08G61/12 ,  C09K3/16 ,  G01N23/225 ,  G03F1/40 ,  G03F7/004 ,  H01B1/12 ,  H01J37/305 ,  H05H1/00

CPC classification number: H01B1/127 ,  C08G61/126 ,  C09K3/16

Abstract: An antistatic agent comprising a water-soluble electroconductive polymer comprising at least a repeating unit having a sulfo group-containing isothianaphthenylene structure; a method for suppressing electrification of an article during the production or use of the article by forming an electroconductive film comprising the water-soluble electroconductive polymer on the article; an article of which electrification is suppressed by having an electroconductive film comprising the water-soluble conductive polymer on the article; and a method for observing or inspecting an article with suppressing electrification thereof during irradiation with charged particle beams by forming an electroconductive film comprising the water-soluble electroconductive polymer on the article. The electroconductive film retains the electrification-suppressing effect and removability stably even when subjected to a heat treatment or left to stand for a long period of time. The antistatic agent can be formulated into a film-forming antistatic composition which can be used at any pH value from acidic to basic and which is excellent in storage stability.

Abstract translation: 一种抗静电剂，其包含至少包含具有含磺基的异硫茚结构的重复单元的水溶性导电聚合物; 一种通过在制品上形成包含水溶性导电聚合物的导电膜来抑制在制造或使用制品期间物品带电的方法; 通过在制品上具有包含水溶性导电聚合物的导电膜来抑制带电的制品; 以及通过在制品上形成包含水溶性导电聚合物的导电膜，在带电粒子束照射期间观察或检查物品的带电抑制方法。 导电膜即使经受热处理也可以稳定地保持电气抑制效果和可移除性，或者长时间静置。 抗静电剂可以配制成成膜抗静电组合物，其可以在酸性至碱性的任何pH值下使用，并且储存稳定性优异。

公开(公告)号：US20090159902A1

公开(公告)日：2009-06-25

申请号：US12095480

申请日：2006-12-19

Applicant: Takaki Yasuda ,  Hideki Tomozawa

Inventor： Takaki Yasuda ,  Hideki Tomozawa

IPC: H01L33/00 ,  B23K1/20 ,  F21V21/00

CPC classification number: H01L33/38 ,  F21K9/00 ,  H01L33/08 ,  H01L33/20 ,  H01L33/486 ,  H01L2224/16 ,  H01L2933/0016

Abstract: A flip-chip type semiconductor light-emitting device having a positive electrode and a negative electrode similar in electrode area and capable of preventing the misalignment of the light-emitting device by utilizing the self alignment effect in manufacturing a light-emitting diode lamp and a printed circuit board for the flip-chip type semiconductor light-emitting device are provided. Furthermore, adopted are a flip-chip type semiconductor light-emitting device 1 which is provided with a negative electrode pad and a positive electrode pad formed on the side opposite the transparent substrate side of the semiconductor layer, wherein each of the electrode pads is formed in the same shape as each other and a printed circuit board for the light-emitting device has a pair of the electrode patterns which are formed in the same shape as each other. Still furthermore, a soldering film is included in each of the electrode pads.

Abstract translation: 一种倒装芯片型半导体发光器件，其具有在电极区域中类似的正极和负极，并且能够通过利用发光二极管灯的制造中的自对准效应来防止发光元件的未对准 提供了用于倒装芯片型半导体发光器件的印刷电路板。 此外，采用倒装芯片型半导体发光器件1，该半导体发光器件1设置有在半导体层的与透明衬底侧相对的一侧上形成的负极焊盘和正电极焊盘，其中形成每个电极焊盘 彼此相同的形状，并且用于发光器件的印刷电路板具有彼此形成为相同形状的一对电极图案。 此外，在每个电极焊盘中包括焊接膜。

公开(公告)号：US07488971B2

公开(公告)日：2009-02-10

申请号：US10574202

申请日：2004-10-01

Applicant: Masato Kobayakawa ,  Hideki Tomozawa ,  Mineo Okuyama

Inventor： Masato Kobayakawa ,  Hideki Tomozawa ,  Mineo Okuyama

IPC: H01L29/06

CPC classification number: H01L33/007 ,  B82Y20/00 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/32 ,  H01L33/325 ,  H01S5/3086 ,  H01S5/3407 ,  H01S5/34333 ,  H01S2304/04

Abstract: A nitride semiconductor product including an n-type layer, a light-emitting layer, and a p-type layer which are formed of a nitride semiconductor and sequentially stacked on a substrate in the above order, the light-emitting layer having a quantum well structure in which a well layer is sandwiched by barrier layers having band gaps wider than the band gap of the well layer. Each barrier layer includes a barrier sublayer C which has been grown at a temperature higher than a growth temperature of the well layer, and a barrier sublayer E which has been grown at a temperature lower than a growth temperature of the barrier sublayer C. The barrier sublayer C is disposed closer to the substrate with respect to the barrier sublayer E.

Abstract translation: 一种氮化物半导体产品，包括由氮化物半导体形成的n型层，发光层和p型层，并按顺序层叠在基板上，发光层具有量子阱 其中阱层被具有比阱层的带隙宽的带隙的势垒层夹持的结构。 每个阻挡层包括在比阱层的生长温度高的温度下生长的阻挡层C，以及在低于势垒层C的生长温度的温度下生长的势垒层E。 子层C相对于阻挡子层E更靠近衬底设置。

公开(公告)号：US07453091B2

公开(公告)日：2008-11-18

申请号：US10591585

申请日：2005-03-03

Applicant: Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

Inventor： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

IPC: H01L29/26

CPC classification number: H01L31/0304 ,  H01L33/025 ,  H01L33/32 ,  H01S5/3054 ,  H01S5/32341 ,  Y02E10/544

Abstract: A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.

Abstract translation: 氮化镓类半导体器件具有作为含有p型杂质且呈p型导电性的氮化镓系化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部包含p型杂质元素，并与其组合，包含氢。

公开(公告)号：US20080230794A1

公开(公告)日：2008-09-25

申请号：US10591987

申请日：2005-03-08

Applicant: Takaki Yasuda ,  Hideki Tomozawa

Inventor： Takaki Yasuda ,  Hideki Tomozawa

IPC: H01L33/00

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/309 ,  H01S5/34333

Abstract: A pn junction type Group III nitride semiconductor light-emitting device 10 (11) of the present invention has a light-emitting layer 2 of multiple quantum well structure in which well layers 22 and barrier layers 21 including Group III nitride semiconductors are alternately stacked periodically between an n-type clad layer 105 and a p-type clad layer 107 which are formed on a crystal substrate and which include Group III nitride semiconductors, in which one end layer 21m of the light-emitting layer 2 is closest to and opposed to the n-type clad layer, and the other end layer 21n of the light-emitting layer 2 is closest to and opposed to the p-type clad layer, both the one and the other end layers are barrier layers, and the other end layer 21n is thicker than the barrier layer of the one end layer.

Abstract translation: 本发明的pn结型III族氮化物半导体发光器件10（11）具有多个量子阱结构的发光层2，其中阱层22和包含III族氮化物半导体的阻挡层21周期性地交替堆叠 在形成在晶体基板上并且包括III族氮化物半导体的n型覆盖层105和p型覆盖层107之间，其中发光层2的一个端层21m最接近并相对 发光层2的另一端层21n与p型覆盖层最接近并与其对置，所以一个端层和另一个端层都是阻挡层，而另一个端层 端层21n比一端层的阻挡层厚。

公开(公告)号：US07402841B2

公开(公告)日：2008-07-22

申请号：US10572680

申请日：2004-09-21

Applicant: Hideki Tomozawa ,  Mineo Okuyama ,  Noritaka Muraki ,  Soichiro Masuyama

Inventor： Hideki Tomozawa ,  Mineo Okuyama ,  Noritaka Muraki ,  Soichiro Masuyama

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC classification number: H01L33/40 ,  H01L33/32 ,  H01L33/42

Abstract: An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance.The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer in a gallium nitride-based compound semiconductor light-emitting device and which is capable of providing ohmic contact, and a second layer which is in contact with a part of a surface of said p-contact layer, wherein the first layer comprises a metal, or an alloy of two or more metals, selected from a first group consisting of Au, Pt, Pd, Ni, Co, and Rh, and the second layer comprises an oxide of at least one metal selected from a second group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.

Abstract translation: 本发明的目的是提供一种用于氮化镓基化合物半导体发光器件的透光电极，该电极具有改善的透光性和接触电阻。 本发明的电极包括与氮化镓基化合物半导体发光器件中的p接触层的表面接触并且能够提供欧姆接触的透光性第一层，并且第二层是 与所述p接触层的表面的一部分接触，其中所述第一层包含金属或两种或更多种金属的合金，所述金属选自Au，Pt，Pd，Ni，Co和 Rh，并且第二层包含选自由Ni，Ti，Sn，Cr，Co，Zn，Cu，Mg和In组成的第二组中的至少一种金属的氧化物。

公开(公告)号：US20070187693A1

公开(公告)日：2007-08-16

申请号：US10591585

申请日：2005-03-03

Applicant: Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

Inventor： Masato Kobayakawa ,  Hideki Tomozawa ,  Hisayuki Miki

IPC: H01L29/15 ,  H01L33/00 ,  H01L31/00

CPC classification number: H01L31/0304 ,  H01L33/025 ,  H01L33/32 ,  H01S5/3054 ,  H01S5/32341 ,  Y02E10/544

Abstract: A gallium nitride-based semiconductor device has a p-type layer that is a gallium nitride compound semiconductor layer containing a p-type impurity and exhibiting p-type conduction. The p-type layer includes a top portion and an inner portion located under the top portion. The inner portion contains the p-type impurity element and, in combination therewith, hydrogen.

Abstract translation: 氮化镓类半导体器件具有作为含有p型杂质且呈p型导电性的氮化镓系化合物半导体层的p型层。 p型层包括顶部和位于顶部下方的内部。 内部包含p型杂质元素，并与其组合，包含氢。

公开(公告)号：US5589270A

公开(公告)日：1996-12-31

申请号：US456313

申请日：1995-06-01

Applicant: Fumio Murai ,  Yasunori Suzuki ,  Hideki Tomozawa ,  Ryuma Takashi ,  Yoshihiro Saida ,  Yoshiaki Ikenoue

Inventor： Fumio Murai ,  Yasunori Suzuki ,  Hideki Tomozawa ,  Ryuma Takashi ,  Yoshihiro Saida ,  Yoshiaki Ikenoue

IPC: G21K5/04 ,  C09D5/24 ,  G03F7/038 ,  G03F7/09 ,  G03F7/11 ,  G03F7/20 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027 ,  H01L21/265 ,  H01L21/266 ,  H01L21/66 ,  B32B9/04

CPC classification number: G03F7/2059 ,  G03F7/093 ,  Y10T428/31504

Abstract: Electrification is suppressed with a water-soluble electrification-suppressing film having an electron conductivity and comprising a polymer resin. A high electrification-suppressing effect which is also high in vacuum can be easily obtained by using the electrification-suppressing film with less contamination.

Abstract translation: 用具有电子传导性并包含聚合物树脂的水溶性带电抑制膜抑制电化。 通过使用污染少的带电抑制膜，可以容易地获得真空中高的高电气化抑制效果。

公开(公告)号：US07781777B2

公开(公告)日：2010-08-24

申请号：US10591987

申请日：2005-03-08

Applicant: Takaki Yasuda ,  Hideki Tomozawa

Inventor： Takaki Yasuda ,  Hideki Tomozawa

IPC: H01L27/15

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01L33/32 ,  H01S5/2009 ,  H01S5/309 ,  H01S5/34333

Abstract: A pn junction type Group III nitride semiconductor light-emitting device 10 (11) of the present invention has a light-emitting layer 2 of multiple quantum well structure in which well layers 22 and barrier layers 21 including Group III nitride semiconductors are alternately stacked periodically between an n-type clad layer 105 and a p-type clad layer 107 which are formed on a crystal substrate and which include Group III nitride semiconductors, in which one end layer 21m of the light-emitting layer 2 is closest to and opposed to the n-type clad layer, and the other end layer 21n of the light-emitting layer 2 is closest to and opposed to the p-type clad layer, both the one and the other end layers are barrier layers, and the other end layer 21n is thicker than the barrier layer of the one end layer.

Abstract translation: 本发明的pn结型III族氮化物半导体发光器件10（11）具有多个量子阱结构的发光层2，其中阱层22和包含III族氮化物半导体的阻挡层21周期性地交替堆叠 在形成在晶体基板上并且包括III族氮化物半导体的n型覆盖层105和p型覆盖层107之间，其中发光层2的一个端层21m最接近并相对于 n型覆盖层和发光层2的另一个端面层21n最靠近p型覆盖层并且与p型覆盖层相对，一个端层和另一个端层都是阻挡层，而另一个端层 21n比一端层的阻挡层厚。