发明授权
- 专利标题: Flash memory device having single page buffer structure and related programming operations
- 专利标题(中): 具有单页缓冲结构和相关编程操作的闪存设备
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申请号: US11347216申请日: 2006-02-06
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公开(公告)号: US07457158B2公开(公告)日: 2008-11-25
- 发明人: Seung-Jae Lee , Jin-Sung Park
- 申请人: Seung-Jae Lee , Jin-Sung Park
- 申请人地址: KR Suwon-si, Gyeonggi-do
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si, Gyeonggi-do
- 代理机构: Volentine & Whitt, PLLC
- 优先权: KR10-2005-0059805 20050704
- 主分类号: G11C16/04
- IPC分类号: G11C16/04
摘要:
A flash memory device is provided, and the flash memory device comprises memory cells, a sense node connected to a selected bit line, a load circuit connected to the sense node, and first and second sense and register circuits, each connected to the sense node. The first sense and register circuit is configured to store a first data value in accordance with the voltage level of the sense node during an initial read interval of a multi-bit program operation. The load circuit is configured to selectively pre-charge the sense node in accordance with the data value stored in the first sense and register circuit during a verify read interval of the multi-bit program operation. A multi-bit programming method for the flash memory device is also provided.