发明授权
- 专利标题: Method for forming solder bumps of increased height
- 专利标题(中): 形成增加高度的焊料凸块的方法
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申请号: US10988528申请日: 2004-11-16
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公开(公告)号: US07459386B2公开(公告)日: 2008-12-02
- 发明人: Li-Hsin Tseng , Gil Huang , Huei-Mei Yu , Chia-Jen Cheng , Ken Sun , Chien-Tung Yu , Blenny Chang , Chih Yang Chan , Jian-Wen Luo , Owen Chen
- 申请人: Li-Hsin Tseng , Gil Huang , Huei-Mei Yu , Chia-Jen Cheng , Ken Sun , Chien-Tung Yu , Blenny Chang , Chih Yang Chan , Jian-Wen Luo , Owen Chen
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Birch, Stewart, Kolasch & Birch, LLP
- 主分类号: H01L21/44
- IPC分类号: H01L21/44
摘要:
A method for forming solder bumps (or solder balls after reflow) of improved height and reliability is provided. In one embodiment, a semiconductor substrate having at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad is provided. A layer of under bump metal (UBM) is formed above the passivation layer and the contact pad. A first patterned and etched photoresist layer is provided above the UBM layer, the first patterned and etched photoresist layer defining at least one first opening therein. A second patterned and etched photoresist layer is provided above the first patterned and etched photoresist layer, the second patterned and etched photoresist layer defining at least one second opening therein, the second opening being wider than the first opening. A solder material is filled in the at least one first opening and substantially filled in the at least one second opening. The first and second photoresist layers are removed and the solder material is reflown to create a solder ball of increased height.
公开/授权文献
- US20060105560A1 Method for forming solder bumps of increased height 公开/授权日:2006-05-18
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