Invention Grant
- Patent Title: Method for forming solder bumps of increased height
- Patent Title (中): 形成增加高度的焊料凸块的方法
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Application No.: US10988528Application Date: 2004-11-16
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Publication No.: US07459386B2Publication Date: 2008-12-02
- Inventor: Li-Hsin Tseng , Gil Huang , Huei-Mei Yu , Chia-Jen Cheng , Ken Sun , Chien-Tung Yu , Blenny Chang , Chih Yang Chan , Jian-Wen Luo , Owen Chen
- Applicant: Li-Hsin Tseng , Gil Huang , Huei-Mei Yu , Chia-Jen Cheng , Ken Sun , Chien-Tung Yu , Blenny Chang , Chih Yang Chan , Jian-Wen Luo , Owen Chen
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method for forming solder bumps (or solder balls after reflow) of improved height and reliability is provided. In one embodiment, a semiconductor substrate having at least one contact pad and an upper passivation layer having at least one opening formed therein exposing a portion of the contact pad is provided. A layer of under bump metal (UBM) is formed above the passivation layer and the contact pad. A first patterned and etched photoresist layer is provided above the UBM layer, the first patterned and etched photoresist layer defining at least one first opening therein. A second patterned and etched photoresist layer is provided above the first patterned and etched photoresist layer, the second patterned and etched photoresist layer defining at least one second opening therein, the second opening being wider than the first opening. A solder material is filled in the at least one first opening and substantially filled in the at least one second opening. The first and second photoresist layers are removed and the solder material is reflown to create a solder ball of increased height.
Public/Granted literature
- US20060105560A1 Method for forming solder bumps of increased height Public/Granted day:2006-05-18
Information query
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