发明授权
- 专利标题： Method for forming a device having multiple silicide types
- 专利标题（中）： 用于形成具有多种硅化物类型的器件的方法
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申请号： US11467980申请日： 2006-08-29
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公开(公告)号： US07459756B2公开(公告)日： 2008-12-02
- 发明人: Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chuan-Yi Lin , Chenming Hu
- 申请人： Chun-Chieh Lin , Wen-Chin Lee , Yee-Chia Yeo , Chuan-Yi Lin , Chenming Hu
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Haynes and Boone, LLP
- 主分类号： H01L29/76
- IPC分类号： H01L29/76
摘要：
Provided is a semiconductor device and a method for its fabrication. The device includes a semiconductor substrate, a first silicide in a first region of the substrate, and a second silicide in a second region of the substrate. The first silicide may differ from the second silicide. The first silicide and the second silicide may be an alloy silicide.
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