发明授权
US07460343B2 Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
失效
使用倾斜蚀刻底层的磁性读取传感器，用于在硬磁堆叠偏压层中诱导单轴磁各向异性
- 专利标题： Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer
- 专利标题（中）： 使用倾斜蚀刻底层的磁性读取传感器，用于在硬磁堆叠偏压层中诱导单轴磁各向异性
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申请号： US11097638申请日： 2005-03-31
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公开(公告)号： US07460343B2公开(公告)日： 2008-12-02
- 发明人: Matthew Joseph Carey , Jeffrey Robinson Childress , Eric Edward Fullerton , Stefan Maat
- 申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , Eric Edward Fullerton , Stefan Maat
- 申请人地址： NL Amsterdam
- 专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人： Hitachi Global Storage Technologies Netherlands B.V.
- 当前专利权人地址： NL Amsterdam
- 代理机构： Zilka-Kotab, PC
- 主分类号： G11B5/39
- IPC分类号： G11B5/39
摘要：
A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.