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1.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效使用倾斜蚀刻底层的磁性读取传感器，用于在硬磁堆叠偏压层中诱导单轴磁各向异性公开(公告)号：US07460343B2
公开(公告)日：2008-12-02
申请号：US11097638
申请日：2005-03-31
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译： 磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。 叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。 各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。
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2.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性公开(公告)号：US07457085B2
公开(公告)日：2008-11-25
申请号：US11096636
申请日：2005-03-31
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。
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3.发明授权Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效用于制造使用倾斜蚀刻底层的磁读取传感器用于在硬磁偏置层中诱导单轴磁各向异性的方法公开(公告)号：US07363699B2
公开(公告)日：2008-04-29
申请号：US11097846
申请日：2005-03-31
CPC分类号： C23C14/025 , B82Y10/00 , B82Y25/00 , C23C14/022 , C23C14/14 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。
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4.发明授权Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 失效用于制造在硬磁性钉扎层中诱导单轴磁各向异性的倾斜蚀刻底层的磁读取传感器的方法公开(公告)号：US07360300B2
公开(公告)日：2008-04-22
申请号：US11097546
申请日：2005-03-31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.
摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。
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5.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 有权采用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁性钉扎层中的单轴磁各向异性公开(公告)号：US07672090B2
公开(公告)日：2010-03-02
申请号：US11097920
申请日：2005-03-31
CPC分类号： G11B5/3903 , B82Y25/00 , B82Y40/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.
摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。
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6.发明授权Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效使用倾斜蚀刻底层制造磁读取传感器的方法，用于在硬磁堆叠偏压层中诱导单轴磁各向异性公开(公告)号：US07360299B2
公开(公告)日：2008-04-22
申请号：US11097543
申请日：2005-03-31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译： 磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。 叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已经被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。 各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。
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7.发明授权Stability-enhancing underlayer for exchange-coupled magnetic structures, magnetoresistive sensors, and magnetic disk drive systems 有权用于交换耦合磁性结构的稳定性增强型底层，磁阻传感器和磁盘驱动系统公开(公告)号：US06836392B2
公开(公告)日：2004-12-28
申请号：US09841942
申请日：2001-04-24
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
IPC分类号： G11B539
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
摘要翻译： 交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。 氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。 底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。 结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。 交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。 由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。
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8.发明授权Exchange-coupled magnetoresistive sensor with a coercive ferrite layer and an oxide underlayer having a spinal lattice structure 失效具有矫顽铁氧体层和具有脊椎晶格结构的氧化物底层的交换耦合磁阻传感器公开(公告)号：US06992866B2
公开(公告)日：2006-01-31
申请号：US10931315
申请日：2004-08-31
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
摘要翻译： 交换耦合磁性结构包括强磁性层，用于偏置铁磁性层的磁化的钴铁氧体的矫顽铁氧体层以及邻近矫顽铁氧体层的氧化钴底层，例如氧化钴。 氧化物底层具有岩盐或尖晶石的晶格结构，并且在室温下不显示磁矩。 底层影响矫顽铁氧体层的结构，因此影响其磁特性，提供增强的矫顽力和增强的热稳定性。 结果，矫顽铁氧体层的热稳定性比没有底层要小得多的厚度。 交换耦合结构用于磁盘驱动系统读磁头中的自旋阀和磁隧道结磁阻传感器。 由于矫顽铁氧体层可以制成1nm的薄而保持热稳定性，所以传感器满足高记录密度系统的窄间隙要求。
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公开(公告)号：US07116532B2
公开(公告)日：2006-10-03
申请号：US10985195
申请日：2004-11-09
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Thai Le , Stefan Maat , Philip Milton Rice
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/012 , G11B5/3903 , G11B5/3967 , H01F10/3277
摘要： An exchange-coupled magnetic structure includes a ferromagnetic layer, a coercive ferrite layer, such as cobalt-ferrite, for biasing the magnetization of the ferromagnetic layer, and an oxide underlayer, such as cobalt-oxide, in proximity to the coercive ferrite layer. The oxide underlayer has a lattice structure of either rock salt or a spinel and exhibits no magnetic moment at room temperature. The underlayer affects the structure of the coercive ferrite layer and therefore its magnetic properties, providing increased coercivity and enhanced thermal stability. As a result, the coercive ferrite layer is thermally stable at much smaller thicknesses than without the underlayer. The exchange-coupled structure is used in spin valve and magnetic tunnel junction magnetoresistive sensors in read heads of magnetic disk drive systems. Because the coercive ferrite layer can be made as thin as 1 nm while remaining thermally stable, the sensor satisfies the narrow gap requirements of high recording density systems.
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10.发明授权公开(公告)号：US06280813B1
公开(公告)日：2001-08-28
申请号：US09416364
申请日：1999-10-08
申请人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
发明人： Matthew Joseph Carey , Eric Edward Fullerton , Bruce Alvin Gurney , Hal Jervis Rosen , Manfred Ernst Schabes
IPC分类号： B32B302
CPC分类号： C23C28/021 , C23C28/00 , C23C28/023 , C23C28/42 , G11B5/66
摘要： A magnetic recording medium for data storage uses a magnetic recording layer having at least two ferromagnetic films antiferromagnetically coupled together across a nonferromagnetic spacer film. The magnetic moments of the two antiferromagnetically-coupled films are oriented antiparallel, and thus the net remanent magnetization-thickness product (Mrt) of the recording layer is the difference in the Mrt values of the two ferromagnetic films. This reduction in Mrt is accomplished without a reduction in the thermal stability of the recording medium because the volumes of the grains in the antiferromagnetically-coupled films add constructively. In a magnetic recording rigid disk application, the magnetic layer comprises two ferromagnetic films, each a granular film of a sputter deposited CoPtCrB alloy, separated by a Ru spacer film having a thickness to maximize the antiferromagnetic exchange coupling between the two CoPtCrB films. One of the ferromagnetic films is made thicker than the other, but the thicknesses are chosen so that the net moment in zero applied magnetic field is low, but nonzero.
摘要翻译： 用于数据存储的磁记录介质使用具有至少两个铁磁膜的磁记录层，其通过非铁磁间隔膜反铁磁耦合在一起。 两个反铁磁耦合薄膜的磁矩定向反平行，因此记录层的净残磁强度 - 厚度积（Mrt）是两个铁磁膜的Mrt值之差。 由于反铁磁耦合膜中的晶粒的体积增加，所以Mrt的这种减少是在记录介质的热稳定性降低的情况下完成的。 在磁记录刚性盘应用中，磁性层包括两个铁磁膜，每个是由溅射沉积的CoPtCrB合金的粒状膜，由具有厚度的Ru隔离膜隔开，以使两个CoPtCrB膜之间的反铁磁交换耦合最大化。 其中一个铁磁膜比另一个更厚，但是选择厚度使得零施加磁场的净力矩低，但非零。
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