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1.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效使用倾斜蚀刻底层的磁性读取传感器，用于在硬磁堆叠偏压层中诱导单轴磁各向异性公开(公告)号：US07460343B2
公开(公告)日：2008-12-02
申请号：US11097638
申请日：2005-03-31
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y25/00 , B82Y40/00 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译： 磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。 叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。 各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。
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2.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效使用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁偏置层中的单轴磁各向异性公开(公告)号：US07457085B2
公开(公告)日：2008-11-25
申请号：US11096636
申请日：2005-03-31
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。
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3.发明授权Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in hard magnetic bias layers 失效用于制造使用倾斜蚀刻底层的磁读取传感器用于在硬磁偏置层中诱导单轴磁各向异性的方法公开(公告)号：US07363699B2
公开(公告)日：2008-04-29
申请号：US11097846
申请日：2005-03-31
CPC分类号： C23C14/025 , B82Y10/00 , B82Y25/00 , C23C14/022 , C23C14/14 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having a hard bias layer with an engineered magnetic anisotropy in a direction substantially parallel with the medium facing surface. The hard bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness on its surface for example in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic bias layers deposited there over.
摘要翻译： 磁阻传感器具有在与介质面对表面基本平行的方向上具有工程磁各向异性的硬偏置层。 硬偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便在其表面上引起各向异性的粗糙度，例如以定向的波纹或小面的形式。 各向异性粗糙度在其上沉积的硬磁偏置层中引起基本平行于面向介质的表面的单轴磁各向异性。
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4.发明授权Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 失效用于制造在硬磁性钉扎层中诱导单轴磁各向异性的倾斜蚀刻底层的磁读取传感器的方法公开(公告)号：US07360300B2
公开(公告)日：2008-04-22
申请号：US11097546
申请日：2005-03-31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3909 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.
摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。
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5.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic pinning layer 有权采用倾斜蚀刻底层的磁性读取传感器，用于诱导硬磁性钉扎层中的单轴磁各向异性公开(公告)号：US07672090B2
公开(公告)日：2010-03-02
申请号：US11097920
申请日：2005-03-31
CPC分类号： G11B5/3903 , B82Y25/00 , B82Y40/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F10/3272 , H01F10/3286 , H01F41/308 , H01L43/08
摘要： A magnetoresistive sensor having a hard magnetic pinning layer with an engineered magnetic anisotropy in a direction substantially perpendicular to the medium facing surface. The hard magnetic pinning layer may be constructed of CoPt, CoPtCr, or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to induce anisotropic roughness for example in form of oriented ripples or facets oriented along a direction parallel to the medium facing surface. The anisotropic roughness induces a strong uniaxial magnetic anisotropy substantially perpendicular to the medium facing surface in the hard magnetic pinning layer deposited there over.
摘要翻译： 磁阻传感器具有在基本上垂直于介质相对表面的方向上具有工程磁各向异性的硬磁性钉扎层。 硬磁性钉扎层可以由CoPt，CoPtCr或一些其他磁性材料构成，并且被沉积在已被离子束蚀刻的底层上。 已经以相对于法线的角度执行离子束蚀刻，以便例如以沿着平行于面向介质的表面的方向取向的定向波纹或小面的形式引起各向异性的粗糙度。 各向异性粗糙度引起基本上垂直于沉积在其上的硬磁性钉扎层中的面向介质的表面的强单轴磁各向异性。
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6.发明授权Method for manufacturing a magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a hard magnetic in-stack bias layer 失效使用倾斜蚀刻底层制造磁读取传感器的方法，用于在硬磁堆叠偏压层中诱导单轴磁各向异性公开(公告)号：US07360299B2
公开(公告)日：2008-04-22
申请号：US11097543
申请日：2005-03-31
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3932 , G11B2005/3996 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49048 , Y10T29/49052
摘要： A magnetoresistive sensor having an in stack bias layer with an engineered magnetic anisotropy in a direction parallel with the medium facing surface. The in-stack bias layer may be constructed of CoPt, CoPtCr or some other magnetic material and is deposited over an underlayer that has been ion beam etched. The ion beam etch has been performed at an angle with respect to normal in order to form anisotropic roughness in form of oriented ripples or facets. The anisotropic roughness induces a uniaxial magnetic anisotropy substantially parallel to the medium facing surface in the hard magnetic in-stack bias layer deposited thereover.
摘要翻译： 磁阻传感器具有在与介质面向表面平行的方向上具有工程磁各向异性的堆叠偏置层。 叠层偏置层可以由CoPt，CoPtCr或一些其它磁性材料构成，并且沉积在已经被离子束蚀刻的底层上。 已经以相对于正常的角度执行离子束蚀刻，以便形成定向的波纹或小面的各向异性的粗糙度。 各向异性粗糙度在其上沉积的硬磁堆叠偏压层中引起基本平行于面向介质的表面的单轴磁各向异性。
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7.发明授权Current perpendicular to plane (CPP) magnetoresistive sensor with improved pinned layer 有权电流垂直于具有改进的钉扎层的平面（CPP）磁阻传感器公开(公告)号：US07649719B2
公开(公告)日：2010-01-19
申请号：US11525790
申请日：2006-09-21
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3906 , H01F10/3236 , H01F10/3263 , H01F10/3272
摘要： A current perpendicular to plane dual giant magnetoresistive sensor (dual CPP GMR sensor) that prevents spin torque noise while having high dR/R performance. The sensor has a design that maximizes the GMR effect (dR/R) by providing a pinned layer structure that maximizes the positive GMR contribution of the AP2 layer (or magnetic layer closest to the spacer layer) while minimizing the negative GMR contribution of the AP1 layer. The pinned layer structure includes an AP1 layer that includes a thin CoFe layer that is exchange coupled with an IrMn or IrMnCr AFM layer and has two or more Co layers with a spin blocking layer sandwiched between them. The use of the Co layers and the spin blocking layer in the AP1 layer minimizes the negative contribution of the AP1 layer. The AP2 layer has a plurality of CoFe layers with nano-layers such as Cu sandwiched between the CoFe layers.
摘要翻译： 垂直于平面双巨磁阻传感器（双CPP GMR传感器）的电流，可防止旋转扭矩噪声，同时具有高dR / R性能。 传感器具有通过提供使AP2层（或最靠近间隔层的磁性层）的正GMR贡献最大化的钉扎层结构来最大化GMR效应（dR / R）的设计，同时使AP1的负GMR贡献最小化 层。 钉扎层结构包括AP1层，其包括与IrMn或IrMnCr AFM层交换耦合的薄CoFe层，并且具有夹在其间的自旋阻挡层的两个或更多个Co层。 在AP1层中使用Co层和自旋阻挡层使AP1层的负面贡献最小化。 AP2层具有夹在CoFe层之间的具有纳米层的多个CoFe层，例如Cu。
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公开(公告)号：US07436634B2
公开(公告)日：2008-10-14
申请号：US11615840
申请日：2006-12-22
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12 , Y10T29/49021 , Y10T29/49044 , Y10T29/49046
摘要： A magnetic shield for use in a magnetic head. The magnetic shield has a magnetic anisotropy associated with a magnetic easy axis of magnetization oriented substantially parallel with the air bearing surface. The magnetic anisotropy of the shield is induced by an anisotropic surface texture. This anisotropic surface texture can be formed in a surface of one or more magnetic layers of the shield, or can be formed in a surface of an under-layer on which the shield is deposited. The shield could also be constructed as a lamination of magnetic layers separated by non-magnetic layers, with the anisotropic surface texture being formed on one or more of the non-magnetic layers.
摘要翻译： 用于磁头的磁屏蔽。 磁屏蔽具有与磁性易磁化轴相关联的磁各向异性，该磁性易磁化轴基本上平行于空气轴承表面定向。 屏蔽的磁各向异性由各向异性表面纹理引起。 这种各向异性表面纹理可以形成在屏蔽的一个或多个磁性层的表面中，或者可以形成在其上沉积有屏蔽层的下层的表面中。 屏蔽也可以被构造为由非磁性层分离的磁性层的叠层，各向异性表面纹理形成在一个或多个非磁性层上。
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9.发明授权Magnetic read sensor employing oblique etched underlayers for inducing uniaxial magnetic anisotropy in a self biased free layer 失效使用倾斜蚀刻底层的磁性读取传感器，用于在自偏压自由层中诱导单轴磁各向异性公开(公告)号：US07382586B2
公开(公告)日：2008-06-03
申请号：US11177990
申请日：2005-07-07
申请人： Matthew Joseph Carey , Jeffrey Robinson Childress , James L. Nix , Stefan Maat , Ian Robson McFadyen
发明人： Matthew Joseph Carey , Jeffrey Robinson Childress , James L. Nix , Stefan Maat , Ian Robson McFadyen
IPC分类号： G11B5/39
CPC分类号： H01F10/3272 , B82Y25/00 , B82Y40/00 , G11B5/3932 , H01F10/16 , H01F10/30 , H01F41/306 , H01L43/08 , H01L43/12
摘要： A magnetoresistive sensor having a self biased free layer. The free layer is constructed upon an underlayer that has been treated by a surface texturing process that configures the underlayer with an anisotropic roughness that induces a magnetic anisotropy in the free layer. The treated layer underlying the free layer can be a spacer layer sandwiched between the free layer and pinned layer or can be a separate underlayer formed opposite the spacer layer. Alternatively, the texturing of an underlayer can be used to induce a magnetic anisotropy in a bias layer that is separated from the free layer by an orthogonal coupling layer. This self biasing of the free layer induced by texturing can also be used in conjunction with biasing from a hard-bias structure.
摘要翻译： 具有自偏置自由层的磁阻传感器。 自由层被构造在已经通过表面纹理化处理处理的底层上，该表面构造过程用在各自自由层中引起磁各向异性的各向异性粗糙度来构造底层。 自由层下面的处理层可以是夹在自由层和被钉扎层之间的间隔层，或者可以是与间隔层相对形成的单独的下层。 或者，底层的纹理化可以用于在通过正交耦合层与自由层分离的偏压层中引起磁各向异性。 由纹理引起的自由层的这种自偏压也可以与来自硬偏压结构的偏压结合使用。
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10.发明授权Increased anisotropy induced by direct ion etch for telecommunications/electronics devices 有权通过电子/电子设备的直接离子蚀刻引起的各向异性增加公开(公告)号：US08004374B2
公开(公告)日：2011-08-23
申请号：US11845239
申请日：2007-08-27
CPC分类号： G11B5/3166 , G11B5/3163 , G11B5/3196 , G11B5/3932 , G11C11/14 , H01L43/12 , Y10T29/49075
摘要： A microwave bandstop filter having a magnetic strip formed over dielectric material. The magnetic resonant frequency is controlled by an induced magnetic anisotropy in the magnetic strip of the microwave bandstop filter. The magnetic anisotropy field is induced by an anisotropic surface texture formed on the surface of the magnetic strip itself, or formed on an underlying layer. Alternatively, the anisotropic surface texture could be formed on both an underlying layer and on the magnetic strip itself. This induced magnetic anisotropy field allows the resonant frequency of the microwave filter to be controlled over a wide frequency range and make high frequency operation possible without reliance on the application of an externally applied magnetic field.
摘要翻译： 一种微波带阻滤波器，其具有在电介质材料上形成的磁条。 磁共振频率由微波带阻滤波器的磁条中的感应磁各向异性控制。 磁各向异性场由形成在磁条本身的表面上的各向异性表面纹理引起，或形成在下层上。 或者，各向异性表面纹理可以形成在下层和磁条本身上。 该感应磁各向异性场允许微波滤波器的谐振频率在宽的频率范围内被控制，并且可以在不依赖外部施加的磁场的情况下进行高频运行。
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