发明授权
US07462539B2 Direct tunneling memory with separated transistor and tunnel areas
失效
具有分离晶体管和隧道区域的直接隧道存储器
- 专利标题： Direct tunneling memory with separated transistor and tunnel areas
- 专利标题（中）： 具有分离晶体管和隧道区域的直接隧道存储器
-
申请号： US11892872申请日： 2007-08-28
-
公开(公告)号： US07462539B2公开(公告)日： 2008-12-09
- 发明人: Kouji Tsunoda , Tatsuya Usuki , Masao Taguchi
- 申请人： Kouji Tsunoda , Tatsuya Usuki , Masao Taguchi
- 申请人地址： JP Kawasaki
- 专利权人： Fujitsu Limited
- 当前专利权人： Fujitsu Limited
- 当前专利权人地址： JP Kawasaki
- 代理机构： Westerman, Hattori, Daniels & Adrian, LLP.
- 优先权： JP2004-118948 20040414
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L21/20
摘要：
A semiconductor device has: an isolation region formed on a semiconductor substrate and defining a continuous active region including a select transistor region and a direct tunnel element region; a gate insulating film formed on a channel region of the select transistor region; a tunnel insulating film formed on a partial area of the direct tunnel element region and having a thickness different from a thickness of the gate insulating film; a continuous floating gate electrode formed above the gate insulating film and the tunnel insulating film; an inter-electrode insulating film formed on a surface of the floating gate electrode; a control gate electrode facing the floating gate electrode via the inter-electrode insulating film; and a pair of source/drain regions formed on both sides of the channel region of the select transistor region and not overlapping the tunnel insulating film.
公开/授权文献
信息查询
IPC分类:
