发明授权
- 专利标题： Integrated circuit device, method of manufacturing the same and method of forming vanadium oxide film
- 专利标题（中）： 集成电路器件及其制造方法以及形成氧化钒膜的方法
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申请号： US11086743申请日： 2005-03-23
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公开(公告)号： US07462921B2公开(公告)日： 2008-12-09
- 发明人: Naoyoshi Kawahara , Hiroshi Murase , Hiroaki Ohkubo , Yasutaka Nakashiba , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
- 申请人： Naoyoshi Kawahara , Hiroshi Murase , Hiroaki Ohkubo , Yasutaka Nakashiba , Naoki Oda , Tokuhito Sasaki , Nobukazu Ito
- 申请人地址： JP Tokyo JP Kanagawa, Kawasaki
- 专利权人： NEC Corporation,NEC Electronics Corporation
- 当前专利权人： NEC Corporation,NEC Electronics Corporation
- 当前专利权人地址： JP Tokyo JP Kanagawa, Kawasaki
- 代理机构： McGinn IP Law Group, PLLC
- 优先权： JP2004-101108 20040330
- 主分类号： H01L31/058
- IPC分类号： H01L31/058 ; H01L29/00 ; H01L21/00
摘要：
A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.
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