公开(公告)号：US20120138803A1

公开(公告)日：2012-06-07

申请号：US13311678

申请日：2011-12-06

Applicant: TAKAO YAMAZAKI ,  Koji Kato ,  Tokuhito Sasaki

Inventor： TAKAO YAMAZAKI ,  Koji Kato ,  Tokuhito Sasaki

IPC: G01J5/02

CPC classification number: G01J5/061 ,  G01J5/046 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An infrared sensor package includes a housing member, which includes an upper-surface section provided with a transmission member which transmits infrared radiation and a lower-surface section and whose inner space is vacuum-sealed, a plate-like heater member which is disposed within the inner space of the housing member and generates heat, an infrared detection element which is fixed onto the heater member and detects the infrared radiation which is transmitted by the transmission member, and a heat-insulating member which has a low thermal conductivity and a smaller cross-sectional area than that of the heater member, and supports the heater member while being fixed onto the lower-surface section.

Abstract translation: 一种红外线传感器组件，包括壳体部件，其包括设置有透射红外线辐射的传输部件和下表面部分的内表面部分并且其内部空间被真空密封的上表面部分，所述板状加热器部件设置在 所述壳体部件的内部空间发热;固定在所述加热器部件上的红外线检测元件，检测由所述透射部件透射的红外线辐射;以及绝热部件，其导热性低， 横截面积高于加热器构件的横截面积，并且在固定到下表面部分的同时支撑加热器构件。

公开(公告)号：US07462921B2

公开(公告)日：2008-12-09

申请号：US11086743

申请日：2005-03-23

Applicant: Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

Inventor： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC: H01L31/058 ,  H01L29/00 ,  H01L21/00

CPC classification number: H01L21/02192 ,  H01L21/022 ,  H01L21/31604 ,  H01L23/5228 ,  H01L28/24 ,  H01L37/00 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.

Abstract translation: 在层间绝缘层上形成氧化钒膜，依次在氧化钒膜上形成氧化硅膜和氮化硅膜。 用抗蚀剂图案作为掩模，对氮化硅膜进行图案化。 然后，使用剥离溶液或氧等离子体灰化除去抗蚀剂图案。 接下来，利用图案化的氮化硅膜作为掩模，氧化硅膜和氧化钒膜被蚀刻以形成氧化钒的电阻膜。

公开(公告)号：US07391092B2

公开(公告)日：2008-06-24

申请号：US11088995

申请日：2005-03-24

Applicant: Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

Inventor： Hiroaki Ohkubo ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC: H01L31/058

CPC classification number: H01L23/34 ,  G01K7/16 ,  H01L23/522 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a semiconductor integrated circuit device, a sheet-like temperature monitor member of vanadium oxide is provided, whose one end is connected to one via while the other end is connected to another via. A sheet-like thermal conducting layer of aluminum is provided below the temperature monitor member. A region equal to or greater than a half of the entire temperature monitor member overlies the thermal conducting layer in a plan view.

Abstract translation: 在半导体集成电路装置中，设置氧化钒片状温度监视部件，其一端与一个通路连接，而另一端与另一个通路连接。 在温度监视器构件的下方设置片状的铝导热层。 等于或大于整个温度监视器构件的一半的区域在俯视图中覆盖在导热层上。

公开(公告)号：US20060186339A1

公开(公告)日：2006-08-24

申请号：US11356380

申请日：2006-02-17

Applicant: Tokuhito Sasaki ,  Masahiko Sano

Inventor： Tokuhito Sasaki ,  Masahiko Sano

IPC: G01J5/00

CPC classification number: G01J5/10 ,  G01J5/20

Abstract: An infrared absorption film (first through third infrared absorption films) that constitutes a photoreceptor of a thermal-type infrared detection element comprises a laminate film in which a film composed of a novel SiCO material having high absorption on the short-wavelength end (approximately 8 to 10 μm) of the waveband (atmospheric window) from 8 to 14 μm is combined with a film composed of SiO, SiN, SiC, SiON, SiCN, or another material having high absorption on the long-wavelength end (approximately 10 to 14 μm) of the abovementioned waveband. Infrared rays on the short-wavelength end that could not be effectively utilized by the conventional thermal infrared detection element can thereby be absorbed by the SiCO membrane, infrared rays throughout the abovementioned waveband can be effectively utilized, and the sensitivity of the thermal infrared detection element can be enhanced.

Abstract translation: 构成热型红外线检测元件的感光体的红外线吸收膜（第一至第三红外线吸收膜）包括：层叠膜，其中由短波长端具有高吸收性的新型SiCO材料构成的膜（约8 从8到14μm的波段（大气窗口）到10um的波长（大气窗口）与由SiO，SiN，SiC，SiON，SiCN或在长波长端具有高吸收性的其它材料（大约10到14）组成的膜 妈妈）的上述波段。 由于传统的热红外线检测元件无法有效利用的短波长端的红外线能够被SiCO膜吸收，所以能够有效地利用上述波段的红外线，热红外线检测元件的灵敏度 可以加强。

公开(公告)号：US06485619B2

公开(公告)日：2002-11-26

申请号：US09987324

申请日：2001-11-14

Applicant: Tokuhito Sasaki

Inventor： Tokuhito Sasaki

IPC: C23C1434

CPC classification number: C23C14/5806 ,  C23C14/0036 ,  C23C14/083 ,  C23C14/505 ,  C23C14/5846

Abstract: A metal film made of titanium is formed on a surface of a wafer. Then, the metal film is subjected to a patterning process to selectively remove undesired portions to form a metal film on an outer area of the wafer and a lattice-patterned metal film on a pattern area of the wafer. The lattice-patterned metal film is formed on an area corresponding to scribe lines of devices to be arranged in a matrix on the wafer. Then, the metal films are connected to a ground. Subsequently, a vanadium oxide film is formed on the wafer using a sputtering process. Therefore, the vanadium oxide film is prevented from becoming charged at the time of deposition thereof on the wafer to suppress increasing of self bias potential and attain uniformity in resistance value of the vanadium oxide film.

Abstract translation: 在晶片的表面上形成由钛制成的金属膜。 然后，对金属膜进行图案化处理，以选择性地去除不期望的部分，以在晶片的外部区域上形成金属膜，并且在晶片的图案区域上形成格子图案化的金属膜。 格子图案化的金属膜形成在对应于晶片上矩阵排列的器件划线的区域上。 然后，将金属膜连接到地面。 随后，使用溅射工艺在晶片上形成氧化钒膜。 因此，防止氧化膜在晶片上沉积时变成带电，以抑制自偏压的增加，并使氧化钒膜的电阻值达到均匀。

公开(公告)号：US08785853B2

公开(公告)日：2014-07-22

申请号：US13311678

申请日：2011-12-06

Applicant: Takao Yamazaki ,  Koji Kato ,  Tokuhito Sasaki

Inventor： Takao Yamazaki ,  Koji Kato ,  Tokuhito Sasaki

IPC: G01J5/04

CPC classification number: G01J5/061 ,  G01J5/046 ,  H01L2224/48091 ,  H01L2924/3025 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An infrared sensor package includes a housing member, which includes an upper-surface section provided with a transmission member which transmits infrared radiation and a lower-surface section and whose inner space is vacuum-sealed, a plate-like heater member which is disposed within the inner space of the housing member and generates heat, an infrared detection element which is fixed onto the heater member and detects the infrared radiation which is transmitted by the transmission member, and a heat-insulating member which has a low thermal conductivity and a smaller cross-sectional area than that of the heater member, and supports the heater member while being fixed onto the lower-surface section.

Abstract translation: 一种红外线传感器组件，包括壳体部件，其包括设置有透射红外线辐射的传输部件和下表面部分的内表面部分并且其内部空间被真空密封的上表面部分，所述板状加热器部件设置在 所述壳体部件的内部空间发热;固定在所述加热器部件上的红外线检测元件，检测由所述透射部件透射的红外线辐射;以及绝热部件，其导热性低， 横截面积高于加热器构件的横截面积，并且在固定到下表面部分的同时支撑加热器构件。

公开(公告)号：US07777288B2

公开(公告)日：2010-08-17

申请号：US11052215

申请日：2005-02-08

Applicant: Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

Inventor： Naoyoshi Kawahara ,  Hiroshi Murase ,  Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC: H01L31/058

CPC classification number: H01C7/1013 ,  H01L27/16 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

Abstract translation: 在半导体集成电路器件的温度传感器部分中，形成多层布线结构的最上层布线层的布线。 在两条电线之间设置氧化钒的片状温度监视元件，以覆盖两条电线。 因此，温度监视元件通过两个通孔和最上面布线层的两条导线连接在多层布线结构的底层布线层的两条导线之间。

公开(公告)号：US20050161822A1

公开(公告)日：2005-07-28

申请号：US11038094

申请日：2005-01-21

Applicant: Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

Inventor： Hiroaki Ohkubo ,  Kuniko Kikuta ,  Yasutaka Nakashiba ,  Naoyoshi Kawahara ,  Hiroshi Murase ,  Naoki Oda ,  Tokuhito Sasaki ,  Nobukazu Ito

IPC: G01K1/14 ,  G01K7/00 ,  G01K7/01 ,  H01L21/4763 ,  H01L21/822 ,  H01L23/00 ,  H01L23/34 ,  H01L23/48 ,  H01L23/522 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L37/00

CPC classification number: H01L23/34 ,  G01K7/015 ,  H01L23/522 ,  H01L27/0248 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.

Abstract translation: 在半导体集成电路器件的温度传感器部分中，在多层布线层的最上层形成钨的第一通孔，并且在覆盖通孔的多层布线层的区域上设置钛焊盘。 以覆盖多层布线层和焊盘的方式设置绝缘层，第二通孔形成为到达焊盘。 通过反应性溅射将氧化钒埋在第二通孔中，并且以使得第二通孔彼此连接的方式提供氧化钒的温度监视部分。 因此，温度监视器部分连接在两条线之间。

公开(公告)号：US06512229B2

公开(公告)日：2003-01-28

申请号：US09799001

申请日：2001-03-06

Applicant: Tokuhito Sasaki

Inventor： Tokuhito Sasaki

IPC: G01J520

CPC classification number: C30B23/02 ,  C30B23/002 ,  C30B29/16

Abstract: Crystal phase V2O3 with x=1.5 in VOx is prepared. Such a lower specific resistance than a desired one as a starting film quality is modified to the final desired specific resistance by heating under an oxidizing atmosphere. A protective film for a bolometer material is formed by physical vapor deposition.

Abstract translation: 制备VO x中x = 1.5的晶相V 2 O 3。 通过在氧化气氛下加热，比作为起始膜质量的所需要的这种较低的电阻率被修饰为最终期望的电阻率。 通过物理气相沉积形成测辐射热量计材料的保护膜。

公开(公告)号：US06333270B1

公开(公告)日：2001-12-25

申请号：US09313634

申请日：1999-05-18

Applicant: Tokuhito Sasaki

Inventor： Tokuhito Sasaki

IPC: H01L21302

CPC classification number: H01L21/32136

Abstract: There is provided a method of carrying out plasma-enhanced etching of a vanadium oxide film, including the steps of (a) depositing one of a resist film and an insulating film on a vanadium oxide film, (b) patterning the one of a resist film and an insulating film to thereby form a mask, and (c) carrying out plasma-enhanced etching of a vanadium oxide film through the use of an etching gas containing a fluoride gas at a volume ratio of 10% or greater, which fluoride having fluorine (F) atoms by six or greater. The method raises an etching ratio of a vanadium oxide film to an underlying insulating layer, resulting in that it is possible to prevent the underlying insulating layer from being etched together, when the vanadium oxide film is etched.

Abstract translation: 提供一种对钒氧化物膜进行等离子体增强蚀刻的方法，包括以下步骤：（a）在氧化钒膜上沉积抗蚀剂膜和绝缘膜中的一种，（b）将抗蚀剂 膜和绝缘膜，从而形成掩模，（c）通过使用含有体积比为10％以上的氟化物气体的蚀刻气体，对氧化钒膜进行等离子体增强蚀刻，该氟化物具有 氟（F）原子数为6以上。 该方法提高了氧化钒膜与下层绝缘层的蚀刻比，导致当氧化钒膜被蚀刻时可以防止下面的绝缘层被一起蚀刻。