发明授权
- 专利标题： Device manufacturing method and apparatus with applied electric field
- 专利标题（中）： 具有应用电场的器件制造方法和器件
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申请号： US10823775申请日： 2004-04-14
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公开(公告)号： US07463336B2公开(公告)日： 2008-12-09
- 发明人: Uwe Mickan , Antonius Johannes Josephus Van Dijsseldonk
- 申请人： Uwe Mickan , Antonius Johannes Josephus Van Dijsseldonk
- 申请人地址： NL Veldhoven
- 专利权人： ASML Netherlands B.V.
- 当前专利权人： ASML Netherlands B.V.
- 当前专利权人地址： NL Veldhoven
- 代理机构： Sterne, Kessler, Goldstein & Fox P.L.L.C.
- 主分类号： G03B27/58
- IPC分类号： G03B27/58 ; G02B27/42
摘要：
A method of fabricating a device using a lithographic process, the method comprising applying a layer of radiation sensitive resist on top of the device, applying a metallic layer on top of the resist layer, and exposing a part of the resist layer to radiation while coupling the metallic layer to a fixed potential so as to apply an electric field across the resist layer, the direction of the electric field being substantially perpendicular to the plane of the resist layer.
公开/授权文献
- US20050231704A1 Device manufacturing method 公开/授权日：2005-10-20