发明授权
- 专利标题: Semiconductor probe and method of writing and reading information using the same
- 专利标题(中): 半导体探头及其使用方法写入和读取信息
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申请号: US11526689申请日: 2006-09-26
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公开(公告)号: US07464584B2公开(公告)日: 2008-12-16
- 发明人: Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
- 申请人: Hong-sik Park , Ju-hwan Jung , Hyoung-soo Ko , Seung-bum Hong
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 代理机构: Sughrue Mion, PLLC
- 优先权: KR10-2005-0108294 20051112
- 主分类号: G01B5/28
- IPC分类号: G01B5/28
摘要:
A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.
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