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    Ferroelectric recording medium and writing method for the same
    1.
    发明授权
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US07889628B2

    公开(公告)日：2011-02-15

    申请号：US12128788

    申请日：2008-05-29

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G11B7/00

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

    Electric field read/write head and method of manufacturing same and data read/write device
    2.
    发明申请
    Electric field read/write head and method of manufacturing same and data read/write device 失效
    电场读/写头及其制造方法及数据读写装置

    公开(公告)号：US20080030909A1

    公开(公告)日：2008-02-07

    申请号：US11723567

    申请日：2007-03-21

    申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

    发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

    IPC分类号： G11B5/33 ,  G11B5/127 ,  G11B5/82

    CPC分类号： G11B9/02 ,  Y10T29/49032

    摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

    摘要翻译： 提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。 数据读/写装置包括从记录介质读取和写入数据的电场读/写头。 电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。 半导体衬底包括具有相邻边缘的第一表面和第二表面。 电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。 源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。 写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。

    Ferroelectric recording medium and writing method for the same
    3.
    发明授权
    Ferroelectric recording medium and writing method for the same 失效
    铁电记录介质和写入方法相同

    公开(公告)号：US07820311B2

    公开(公告)日：2010-10-26

    申请号：US11348485

    申请日：2006-02-07

    申请人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hyoung-soo Ko ,  Eun-sik Kim ,  Sung-dong Kim ,  Ju-hwan Jung ,  Hong-sik Park ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G11B5/64

    CPC分类号： G11B9/02 ,  G11C11/5657 ,  Y10S977/947

    摘要： A ferroelectric recording medium and a writing method for the same are provided. The ferroelectric recording medium includes a ferroelectric layer which reverses its polarization when receiving a predetermined coercive voltage. A nonvolatile anisotrophic conduction layer is formed on the ferroelectric layer. A resistance of the anisotrophic conduction layer decreases when receiving a first voltage lower than the coercive voltage, and the resistance of the anisotrophic conduction layer increases when receiving a second voltage higher than the coercive voltage. Multi-bit information is stored by a combination of polarization states of the ferroelectric layer and the resistance of the anisotrophic conduction layer. Accordingly, multiple bits can be expressed on one domain of the ferroelectric recording medium.

    摘要翻译： 提供铁电记录介质及其写入方法。 铁电记录介质包括在接收预定的矫顽电压时反转其极化的铁电层。 在铁电层上形成非挥发性各向异性导电层。 当接收到低于矫顽电压的第一电压时，各向异性传导层的电阻降低，并且当接收到高于矫顽电压的第二电压时，各向异性导电层的电阻增加。 通过铁电层的极化状态和各向异性导电层的电阻的组合来存储多位信息。 因此，可以在铁电记录介质的一个域上表示多个位。

    Semiconductor probe with resistive tip and method of fabricating the same
    5.
    发明授权
    Semiconductor probe with resistive tip and method of fabricating the same 失效
    具有电阻尖端的半导体探针及其制造方法

    公开(公告)号：US07319224B2

    公开(公告)日：2008-01-15

    申请号：US11219732

    申请日：2005-09-07

    申请人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    发明人： Hong-sik Park ,  Kyoung-lock Baeck ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Chul-min Park ,  Seung-bum Hong

    IPC分类号： G21K7/00

    CPC分类号： G11B9/1409 ,  G01Q60/30 ,  Y10S977/875 ,  Y10S977/878 ,  Y10S977/879

    摘要： Provided are a semiconductor probe with a resistive tip, and a method of fabricating the semiconductor probe. The method includes forming a stripe-shaped mask layer on a substrate doped with a first impurity, and forming first and second electrode regions by heavily doping portions of the substrate not covered by the mask layer with a second impurity opposite in polarity to the first impurity; annealing the substrate to decrease a gap between the first and second semiconductor electrode regions, and forming resistive regions lightly doped with the second impurity at portions contiguous with the first and second semiconductor electrode regions; forming a stripe-shaped first photoresist orthogonal to the mask layer, and etching the mask layer such that the mask layer has a square shape; forming a second photoresist on the substrate to cover a portion of the first photoresist and define a cantilever region; forming the cantilever region by etching portions not covered by the first and second photoresists; and removing the first and second photoresists, and forming a resistive tip having a semi-quadrangular pyramidal shape by etching portions of the substrate not covered by the mask layer.

    摘要翻译： 提供具有电阻尖端的半导体探针和制造半导体探针的方法。 该方法包括在掺杂有第一杂质的衬底上形成条形掩模层，以及通过以与第一杂质极性相反的第二杂质重掺杂未被掩模层覆盖的衬底的部分来形成第一和第二电极区 ; 退火所述衬底以减小所述第一和第二半导体电极区之间的间隙，以及在与所述第一和第二半导体电极区相邻的部分形成轻掺杂有所述第二杂质的电阻区; 形成与所述掩模层正交的条状的第一光致抗蚀剂，并且蚀刻所述掩模层，使得所述掩模层具有正方形形状; 在所述基板上形成第二光致抗蚀剂以覆盖所述第一光致抗蚀剂的一部分并限定悬臂区域; 通过蚀刻未被第一和第二光致抗蚀剂覆盖的部分形成悬臂区域; 以及去除所述第一和第二光致抗蚀剂，以及通过蚀刻未被所述掩模层覆盖的所述衬底的部分，形成具有半四棱锥形形状的电阻尖端。

    ELECTRIC FIELD INFORMATION READING HEAD, ELECTRIC FIELD INFORMATION WRITING/READING HEAD AND FABRICATION METHODS THEREOF AND INFORMATION STORAGE DEVICE USING THE SAME
    6.
    发明申请
    ELECTRIC FIELD INFORMATION READING HEAD, ELECTRIC FIELD INFORMATION WRITING/READING HEAD AND FABRICATION METHODS THEREOF AND INFORMATION STORAGE DEVICE USING THE SAME 失效
    电场信息读取头，电场信息写入/读取头及其制造方法及其使用的信息存储装置

    公开(公告)号：US20100232061A1

    公开(公告)日：2010-09-16

    申请号：US12300177

    申请日：2007-05-10

    申请人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

    发明人： Ju-hwan Jung ,  Hyoung-soo Ko ,  Hong-sik Park ,  Yong-su Kim ,  Seung-bum Hong

    IPC分类号： G11B5/127 ,  H01L21/336 ,  H01L21/78

    CPC分类号： G11B9/02

    摘要： Provided is an electric field information reading head for reading information from a surface electric charge of an information storage medium, the electric field information reading head comprising a semiconductor substrate having a resistance region formed in a central part at one end of a surface facing a recording medium, the resistance region being lightly doped with impurities, and source and drain regions formed on both sides of the resistance region, the source region and the drain region being more highly doped with impurities than the resistance region. The source region and the drain region extend along the surface of the semiconductor substrate facing the recording medium, and electrodes are connected electrically with the source region and the drain region respectively. In addition, provided is a method of fabricating the electric field information reading head and a method of mass-producing the electric field information reading head on a wafer.

    摘要翻译： 提供一种用于从信息存储介质的表面电荷读取信息的电场信息读取头，电场信息读取头包括半导体衬底，该半导体衬底具有形成在面向记录的表面的一端的中心部分的电阻区域 介质，电阻区域被轻掺杂杂质，形成在电阻区两侧的源区和漏区，源极区和漏区比电阻区更加掺杂杂质。 源极区域和漏极区域沿着面向记录介质的半导体衬底的表面延伸，并且电极分别与源极区域和漏极区域电连接。 此外，提供了制造电场信息读取头的方法和在晶片上批量生成电场信息读取头的方法。

    Electric field read/write head and method of manufacturing same and data read/write device
    7.
    发明授权
    Electric field read/write head and method of manufacturing same and data read/write device 失效
    电场读/写头及其制造方法及数据读写装置

    公开(公告)号：US07659562B2

    公开(公告)日：2010-02-09

    申请号：US11723567

    申请日：2007-03-21

    申请人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

    发明人： Hyoung-soo Ko ,  Ju-hwan Jung ,  Yong-su Kim ,  Seung-bum Hong ,  Hong-sik Park

    IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/34 ,  H01L29/74 ,  H01L31/111 ,  H01L27/14 ,  H01L29/82 ,  H01L29/84 ,  H01L43/00 ,  G11B5/187 ,  G11B9/00

    CPC分类号： G11B9/02 ,  Y10T29/49032

    摘要： An electric field read/write head, a method of manufacturing the same, and a data read/write device including the electric field read/write head are provided. The data read/write device includes an electric field read/write head which reads and writes data to and from a recording medium. The electric field read/write head includes a semiconductor substrate, a resistance region, source and drain regions, and a write electrode. The semiconductor substrate includes a first surface and a second surface with adjoining edges. The resistance region is formed to extend from a central portion at one end of the first surface to the second surface. The source region and the drain region are formed at either side of the resistance region and are separated from the first surface. The write electrode is formed on the resistance region with an insulating layer interposed between the write electrode and the resistance region.

    摘要翻译： 提供电场读/写头，其制造方法以及包括电场读/写头的数据读/写装置。 数据读/写装置包括从记录介质读取和写入数据的电场读/写头。 电场读/写头包括半导体衬底，电阻区，源极和漏极区以及写入电极。 半导体衬底包括具有相邻边缘的第一表面和第二表面。 电阻区域形成为从第一表面的一端的中心部分延伸到第二表面。 源极区域和漏极区域形成在电阻区域的两侧并且与第一表面分离。 写电极形成在电阻区上，绝缘层位于写电极和电阻区之间。

    Magnetic logic device and methods of manufacturing and operating the same
    8.
    发明授权
    Magnetic logic device and methods of manufacturing and operating the same 有权
    磁逻辑器件及其制造和操作方法

    公开(公告)号：US07529119B2

    公开(公告)日：2009-05-05

    申请号：US11320898

    申请日：2005-12-30

    申请人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

    发明人： Sung-dong Kim ,  Eun-sik Kim ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Dong-ki Min ,  Hong-sik Park ,  Seung-bum Hong

    IPC分类号： G11C11/00

    CPC分类号： H03K19/16 ,  H01L43/08

    摘要： A magnetic logic device (MLD) and methods of manufacturing and operating an MLD are provided. The MLD includes: a first interconnection; a lower magnetic layer formed on the first interconnection, the lower magnetic layer having a magnetization direction fixed in a predetermined direction; a non-magnetic layer formed on the lower magnetic layer; an upper magnetic layer formed on the non-magnetic layer, the upper magnetic layer having a magnetization direction parallel or anti-parallel to the magnetization direction of the lower magnetic layer; and a second interconnection formed on the upper magnetic layer. A first current source is disposed between one end of the first interconnection and one end of the second interconnection and a second current source is disposed between the other end of the first interconnection and the other end of the second interconnection.

    摘要翻译： 提供了一种磁逻辑器件（MLD）以及制造和操作MLD的方法。 MLD包括：第一个互连; 形成在所述第一互连上的下磁性层，所述下磁性层具有沿预定方向固定的磁化方向; 形成在下磁性层上的非磁性层; 形成在所述非磁性层上的上磁性层，所述上磁性层具有与所述下磁性层的磁化方向平行或反平行的磁化方向; 以及形成在上磁性层上的第二互连。 第一电流源设置在第一互连的一端和第二互连的一端之间，第二电流源设置在第一互连的另一端和第二互连的另一端之间。

    Semiconductor probe and method of writing and reading information using the same
    9.
    发明授权
    Semiconductor probe and method of writing and reading information using the same 失效
    半导体探头及其使用方法写入和读取信息

    公开(公告)号：US07464584B2

    公开(公告)日：2008-12-16

    申请号：US11526689

    申请日：2006-09-26

    申请人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

    发明人： Hong-sik Park ,  Ju-hwan Jung ,  Hyoung-soo Ko ,  Seung-bum Hong

    IPC分类号： G01B5/28

    CPC分类号： G11B9/02 ,  G01Q10/06 ,  G01Q70/08 ,  G01Q80/00

    摘要： A semiconductor probe and a method of writing and reading information using the same. The semiconductor probe includes a cantilever and a tip formed on an end portion of the cantilever to write or read information on or from a ferroelectric medium on a surface of which an electrode is formed. The tip includes a resistive region lightly doped with semiconductor impurities and a conductive region heavily doped with the semiconductor impurities. The cantilever includes an electrostatic force generation electrode formed on a bottom surface facing the medium. A contact force between the tip and the medium is adjusted by selectively applying a voltage between the electrode formed on the ferroelectric medium and the electrostatic force generation electrode.

    摘要翻译： 半导体探针和使用其的信息的写入和读取方法。 半导体探针包括形成在悬臂的端部上的悬臂和尖端，以在其上形成有电极的表面上写入或读取铁电介质上的信息。 尖端包括轻掺杂半导体杂质的电阻区域和重掺杂半导体杂质的导电区域。 悬臂包括形成在面向介质的底面上的静电力产生电极。 通过在形成在铁电介质上的电极和静电力产生电极之间选择性地施加电压来调节尖端和介质之间的接触力。