- 专利标题: Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
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申请号: US11896509申请日: 2007-09-04
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公开(公告)号: US07465647B2公开(公告)日: 2008-12-16
- 发明人: Shunpei Yamazaki , Toru Takayama , Yohei Kanno
- 申请人: Shunpei Yamazaki , Toru Takayama , Yohei Kanno
- 申请人地址: JP Kanagawa-ken
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Kanagawa-ken
- 代理机构: Robinson Intellectual Property Law Office, P. C.
- 代理商 Eric J. Robinson
- 优先权: JP2003-423888 20031219
- 主分类号: H01L21/46
- IPC分类号: H01L21/46 ; H01L21/30 ; H01L21/762
摘要:
With non-contact and contact IC chips becoming common, it is necessary to mass-produce enormous amount of IC chips, which are utilizable for human beings, animals and plants, commercial products, banknotes, and the like, at low cost. For example, it is necessary to manufacture IC chips to be applied to commercial products, banknotes, and the like at a cost of 1 to several yen per IC chip, preferably, at a cost less than 1 yen, and it is desired to realize a structure of an IC chip that can be mass-produced at low cost and a manufacturing process of the IC chip.A method of manufacturing a thin film integrated circuit device according to the present invention includes steps of forming a peel-off layer over a thermally oxidized silicon substrate, forming a plurality of thin film integrated circuit devices over the peel-off layer with a base film interposed therebetween, forming a groove between the plurality of thin film integrated circuit devices, and separating the plurality of thin film integrated circuit devices by introducing one of a gas and a liquid including halogen fluoride into the groove to remove the peel-off layer.
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